AO6403_11 [AOS]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AO6403_11 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总5页 (文件大小：540K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO6403
30V P-Channel MOSFET
General Description
Product Summary
VDS
-30V
The AO6403 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
-6A
< 35mΩ
< 58mΩ
RDS(ON) (at VGS = -4.5V)
TSOP6
D
Top View
Bottom View
Top View
D
D
D
D
6
2
3
5
4
G
G
S
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
-30
±20
-6
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
ID
-5
A
Pulsed Drain Current C
IDM
PD
-30
2
TA=25°C
TA=70°C
W
°C
Power Dissipation B
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
47.5
74
RθJA
Steady-State
Steady-State
RθJL
37
Rev 4: Nov 2011
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Page 1 of 5
AO6403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.4
nA
V
VGS(th)
ID(ON)
-1.3
-30
-1.85
A
22
32
35
39
58
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-5A
VDS=-5V, ID=-6A
IS=-1A,VGS=0V
34
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
18
-0.8
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
760
140
95
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1.5
3.2
5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
13.6
6.7
2.5
3.2
8
16
8
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=-10V, VDS=-15V, ID=-6A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=2.7Ω,
RGEN=3Ω
6
ns
tD(off)
tf
17
5
ns
ns
trr
IF=-6A, dI/dt=100A/µs
IF=-6A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15
ns
Qrr
nC
9.7
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Nov 2011
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Page 2 of 5
AO6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
40
35
30
25
20
15
10
5
-10V
-6V
-5V
-4.5V
VDS=-5V
-4V
-3.5V
125°C
25°C
VGS=-3V
0
0
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-6A
45
40
35
30
25
20
15
10
VGS=-4.5V
VGS=-4.5V
ID=-5A
VGS=-10V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
(Note E)
80
60
40
20
0
1.0E+02
1.0E+01
ID=-6A
1.0E+00
125°C
25°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 4: Nov 2011
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Page 3 of 5
AO6403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
VDS=-15V
ID=-6A
1000
800
600
400
200
0
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10000
1000
100
10
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
DC
10s
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001
0.001
0.1
Pulse Width (s)
10
1000
0.01
0.1
1
10
100
-VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 11: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=110°C/W
0.1
0.01
PD
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: Nov 2011
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Page 4 of 5
AO6403
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDCC
Qgs
Qgd
+
Vds
VDCC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 4: Nov 2011
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Page 5 of 5
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