AO6402B [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET![AO6402B](http://pdffile.icpdf.com/pdf2/p00209/img/icpdf/AO6402_1181699_icpdf.jpg)
型号: | AO6402B |
厂家: | ![]() |
描述: | 30V N-Channel MOSFET |
文件: | 总5页 (文件大小:273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AO6402
30V N-Channel MOSFET
General Description
Product Summary
VDS
30V
The AO6402 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device may
be used as a load switch or in PWM applications.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
5A
< 31mΩ
< 43mΩ
TSOP6
D
Top View
Bottom View
Top View
D
D
D
D
G
G
S
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
5
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
ID
4
A
Pulsed Drain Current C
IDM
PD
20
1.25
TA=25°C
TA=70°C
W
°C
Power Dissipation B
0.8
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
82
Max
100
130
70
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
110
56
RθJL
Rev 8: February 2011
www.aosmd.com
Page 1 of 5
AO6402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
V
DS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.4
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=5A
1.2
25
1.8
A
25.5
41
31
50
43
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=4A
34
mΩ
S
VDS=5V, ID=5A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
15
IS=1A,VGS=0V
0.76
1
V
Maximum Body-Diode Continuous Current
1.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
255
45
310
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
35
50
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=5A
VGS=10V, VDS=15V, RL=3Ω,
1.6
3.25
4.9
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
Total Gate Charge
5.2
2.55
0.85
1.3
6.3
3.2
nC
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
nC
nC
ns
ns
ns
ns
4.5
2.5
R
GEN=3Ω
tD(off)
tf
14.5
3.5
trr
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8.5
2.2
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 8: February 2011
www.aosmd.com
Page 2 of 5
AO6402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
5
30
25
20
15
10
5
VDS=5V
10V
7V
4.5V
4V
3.5V
25°C
125°C
VGS=3V
0
0
1
1.5
2
2.5
3
3.5
4
4.5
0
1
2
3
4
5
V
GS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
2
40
1.8
1.6
1.4
1.2
1
VGS=10V
ID=5A
35
30
25
20
VGS=4.5V
VGS=4.5V
ID=4A
VGS=10V
0.8
0
3
6
9
12
15
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
100
80
1.0E+02
1.0E+01
ID=5A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
60
125°C
125°C
25°C
0.8
40
25°C
20
0.0
0.2
0.4
0.6
1.0
1.2
2
4
6
8
10
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Rev 8: February 2011
www.aosmd.com
Page 3 of 5
AO6402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
350
300
250
200
150
100
50
10
VDS=15V
ID=5A
8
Ciss
6
4
Coss
2
Crss
0
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
Q
g (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10000
1000
100
10
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
10s
DC
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
VDS (Volts)
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=130°C/W
1
0.1
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 8: February 2011
www.aosmd.com
Page 4 of 5
AO6402
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 8: February 2011
www.aosmd.com
Page 5 of 5
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