AO6402L [ETC]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO6402L |
| 厂家： | 
ETC |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Rev 3:Nov 2004
AO6402, AO6402L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6402 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device may be used as a load switch or in PWM
applications. AO6402L ( Green Product ) is offered in
a lead-free package.
VDS (V) = 30V
ID = 6.9A
R
R
DS(ON) < 28mΩ (VGS = 10V)
DS(ON) < 42mΩ (VGS = 4.5V)
D
S
TSOP-6
Top View
1
2
3
6
5
4
D
D
G
D
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
Gate-Source Voltage
30
±20
V
V
VGS
TA=25°C
TA=70°C
6.9
Continuous Drain
Current A
Pulsed Drain Current B
A
ID
5.8
IDM
20
TA=25°C
TA=70°C
2
PD
W
Power Dissipation
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
74
Steady-State
Steady-State
RθJL
35
Alpha & Omega Semiconductor, Ltd.
AO6402, AO6402L
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
100
3
nA
V
VGS(th)
ID(ON)
1
1.9
20
A
V
GS=10V, ID=6.9A
22.5
31.3
34.5
15.4
0.76
28
38
42
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.0A
DS=5V, ID=6.9A
IS=1A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
10
S
V
A
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
680
102
77
820
3.6
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13.84 16.7
nC
nC
nC
nC
ns
6.74
1.82
3.2
8.1
VGS=10V, VDS=15V, ID=6.9A
Qgd
tD(on)
tr
tD(off)
tf
4.6
VGS=10V, VDS=15V, RL=2.2Ω,
4.1
ns
R
GEN=3Ω
20.6
5.2
ns
ns
trr
IF=6.9A, dI/dt=100A/µs
IF=6.9A, dI/dt=100A/µs
16.5
7.8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
20
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO6402, AO6402L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
10V
6V
5V
4.5V
VDS=5V
4V
3.5V
125°C
4
VGS=3V
25°C
3.5
0
0
0
0.5
1
1.5
2
2.5
3
4
4.5
0
1
2
3
4
5
VGS (Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
60
50
40
30
20
10
1.6
1.5
1.4
1.3
1.2
1.1
1
VGS=10V
ID=5A
VGS=4.5V
VGS=4.5V
VGS=10V
0.9
0.8
0
50
100
150
200
0
5
10
D (Amps)
15
20
Temperature ( °C)
I
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
60
50
40
30
20
10
ID=5A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body diode characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO6402, AO6402L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
900
10
f=1MHz
VGS=0V
VDS=15V
ID=6.9A
800
700
600
500
400
300
200
100
0
8
6
4
2
0
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100
10
1
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10µs
10ms
0.1s
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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