AO6401A [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO6401A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：772K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO6401A
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6401A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO6401A is Pb-free (meets ROHS &
Sony 259 specifications).
VDS = -30V
ID = -5.0A
(VGS = -10V)
RDS(ON) < 44mΩ (VGS = -10V)
RDS(ON) < 55mΩ (VGS = -4.5V)
R
DS(ON) < 82mΩ (VGS = -2.5V)
D
TSOP6
Top View
1
2
3
6
5
4
D
D
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
10 Sec
Steady State
-30
Units
Drain-Source Voltage
V
Gate-Source Voltage
VGS
±12
V
A
TA=25°C
TA=70°C
-5
-3.7
-3.2
Continuous Drain
Current A
ID
-3.7
Pulsed Drain Current B
IDM
-25
TA=25°C
TA=70°C
1.6
1.0
1.0
0.7
Power Dissipation A
PD
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
58
Max
80
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady State
Steady State
94
120
50
RθJL
37
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO6401A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID = -250µA, VGS = 0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
V
DS = -30V, VGS = 0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ = 55°C
TJ=125°C
V
DS = 0V, VGS = ±12V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-1.5
nA
V
VDS = VGS ID = -250µA
VGS(th)
ID(ON)
-0.5
-25
-1
VGS = -4.5V, VDS = -5V
A
V
GS = -10V, ID = -5.0A
35
49
44
62
55
82
mΩ
RDS(ON)
Static Drain-Source On-Resistance
V
GS = -4.5V, ID = -4.0A
44
mΩ
mΩ
S
VGS = -2.5V, ID = -3.5A
VDS = -5V, ID = -5.0A
IS = -1A,VGS = 0V
66
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
13
-0.73
-1
V
Maximum Body-Diode Continuous Current
-1.6
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
943
108
73
1180
pF
pF
pF
Ω
VGS= 0V, VDS= -15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS= 0V, VDS= 0V, f=1MHz
3
6
12
13
SWITCHING PARAMETERS
Qg
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
9.8
2.0
3.3
5.2
6.8
42
nC
nC
nC
ns
V
GS= -4.5V, VDS= -15V,
Qgs
Qgd
tD(on)
tr
ID= -5A
V
GS= -10V, VDS= -15V, RL=3Ω,
ns
RGEN=3Ω
tD(off)
ns
tf
trr
Qrr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
15
21
14.3
ns
ns
IF= -5A, dI/dt=100A/µs
IF= -5A, dI/dt=100A/µs
28
nC
Body Diode Reverse Recovery Charge
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25°C. in
any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev0 Oct 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO6401A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
25
20
15
10
5
-3.5V
-10V
VDS= -5V
-3.0V
-4.5V
25°C
-2.5V
VGS=-2.0V
125°C
-40°C
2
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2.5
3
3.5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
90
1.6
1.4
1.2
1.0
0.8
0.6
VGS= -4.5V
ID= -4A
80
70
60
50
40
30
VGS= -10V
VGS= -2.5V
ID= -5A
VGS= -2.5V
ID= -3.5A
VGS= -4.5V
VGS= -10V
0
2
4
6
8
10
-50 -25
0
25
50
75 100 125 150 175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
120
100
80
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
ID= -5.0A
125°C
25°C
125°C
25°C
60
40
-40°C
-40°C
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
6
7
8
9
10
-VSD (Volts)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO6401A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
5
4
3
2
1
0
1400
1200
1000
800
600
400
200
0
VDS= -15V
ID= -5A
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
5
10
15
-VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100
10
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
limited
1ms
10ms
100ms
0.1
0.01
1
TJ(Max)=150°C
TA=25°C
10s
DC
0.1
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=120°C/W
1
0.1
PD
G
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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