AO6401L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO6401L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO6401
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6401 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO6401 is Pb-free
(meets ROHS & Sony 259 specifications). AO6401L
is a Green Product ordering option. AO6401 and
AO6401L are electrically identical.
VDS (V) = -30V
ID = -5 A (VGS = -10V)
RDS(ON) < 49mΩ (VGS = -10V)
RDS(ON) < 64mΩ (VGS = -4.5V)
RDS(ON) < 119mΩ (VGS = -2.5V)
D
S
TSOP6
Top View
1
2
3
6
5
4
D
D
G
D
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
-5
V
A
TA=25°C
TA=70°C
ID
-4.2
Pulsed Drain Current B
IDM
-30
TA=25°C
TA=70°C
2
PD
W
Power Dissipation A
1.44
-55 to 150
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
47.5
74
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
RθJL
37
Alpha & Omega Semiconductor, Ltd.
AO6401
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
V
DS=-24V, VGS=0V
-1
IDSS
Zero Gate Voltage Drain Current
µA
-5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
±100
-1.3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-0.7
-25
-1
V
GS=-4.5V, VDS=-5V
A
VGS=-10V, ID=-5A
42
49
74
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
S
V
GS=-4.5V, ID=-4A
VGS=-2.5V, ID=-1A
DS=-5V, ID=-5A
IS=-1A,VGS=0V
53
81
64
119
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
7
11
-0.75
-1
-3
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
943
108
73
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
6
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.5
2.1
2.9
6
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-15V, ID=-5A
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=6Ω
3
tD(off)
tf
40
11
trr
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
21.2
12.8
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 3 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
25
20
15
10
5
VDS=-5V
-10V
-4.5V
8
-3V
6
125°C
-2.5V
4
25°C
VGS=-2V
2
0
0
0
1
2
3
4
5
0
0.5
1
1.5
-VGS(Volts)
2
2.5
3
-VDS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
120
100
80
1.6
1.4
1.2
1
ID=-5A
VGS=-4.5V
VGS=-10V
VGS=-2.5V
VGS=-4.5V
VGS=-2.5V
ID=-2A
60
40
VGS=-10V
20
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
190
170
150
130
110
90
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-2A
125°C
125°C
70
25°C
50
25°C
30
10
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
-VSD (Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO6401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
5
4
3
2
1
0
VDS=-15V
ID=-5A
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
TJ(Max)=150°C
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
TA=25°C
10µs
RDS(ON)
100µs
limited
1ms
0.1s
10ms
1s
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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