AO6402AL [FREESCALE]
N-Channel 30V (D-S) MOSFET Low Gate Charge Fast Switch; N沟道30V （ DS ） MOSFET低栅极电荷快速转换
| 型号： | AO6402AL |
| 厂家： | 
Freescale |
| 描述： | N-Channel 30V (D-S) MOSFET Low Gate Charge Fast Switch |
| 文件： | 总2页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Freescale
AO6402AL /MC6402AL
N-Channel 30V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low rDS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are power switch, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
6.3
5.4
0.032 @ VGS = 10 V
0.044 @ VGS = 4.5V
30
1
2
3
6
5
4
•
•
•
•
Low Gate Charge
Fast Switch
Miniature TSOP-6 Surface Mount Package
Saves Board Space
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
V
TA=25oC
TA=70oC
6.3
5.1
±30
1.7
2.0
1.3
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
A
W
oC
TA=25oC
TA=70oC
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol Maximum Units
t <= 5 sec
Steady-State
62.5
oC/W
RTHJA
110
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
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Freescale
AO6402AL /MC6402AL
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Limits
Unit
Parameter
Symbol
Test Conditions
Min Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 uA
VDS = 0 V, VGS = ±20 V
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55oC
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 6.3 A
1.0
3.0
±100 nA
1
10
V
IDSS
Zero Gate Voltage Drain Current
On-State Drain CurrentA
uA
ID(on)
30
A
36
46
45
44
64
Drain-Source On-ResistanceA
rDS(on)
mΩ
VGS = 4.5 V, ID = 5.4 A
Forward TranconductanceA
Diode Forward Voltage
gfs
VSD
VDS = 10 V, ID = 6.3 A
IS = 1.7 A, VGS = 0 V
S
V
0.80
1.2
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qg
Qgs
Qgd
td(on)
tr
4.7
1.7
1.4
16
5
VDS = 15 V, VGS = 5 V, ID = 6.3 A
nC
VDD = 15 V, RL = 15 Ω, ID = 1 A,
VGEN = 10 V
ns
Turn-Off Delay Time
Fall-Time
td(off)
tf
23
3
Source-Ddrain Reverse Recovery Time
trr
IF = 1.7 A, di/dt = 100 A/uS
41
Notes
a.
b.
Pulse test: PW <= 300us duty cycle <= 2%.
Guaranteed by design, not subject to production testing.
rther notice to any products herein. RF EESCALE makes no
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