AO4423 [FREESCALE]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AO4423 |
| 厂家： | 
Freescale |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总4页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4423
30V P-Channel MOSFET
General Description
excellent R
The AO4423 uses advanced trench technology to provide
DS(ON), and ultra-low low gate charge with a
25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -30V
ID = -17A
RDS(ON) < 6.2mΩ
RDS(ON) < 7.2mΩ
(VGS = -20V)
(VGS = -20V)
(VGS = -10V)
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
Maximum
-30
Units
V
V
VGS
±25
TA=25°C
TA=70°C
-17
Continuous Drain
Current AF
ID
-14
A
Pulsed Drain Current B
IDM
-182
3.1
TA=25°C
TA=70°C
PD
W
°C
Power Dissipation A
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
26
50
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
Steady-State
40
75
24
RθJA
Maximum Junction-to-Lead C
RθJL
14
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AO4423
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±20V
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
±1
µA
µA
V
IGSS
Gate-Body leakage current
±10
-2.6
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
-1.5
-2.1
V
GS=-10V, VDS=-5V
-182
A
VGS=-20V, ID=-15A
5.1
7.4
6.2
9
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-15A
VGS=-6V, ID=-10A
VDS=-5V, ID=-15A
IS=-1A,VGS=0V
5.9
7.2
9.5
mΩ
mΩ
S
7.5
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
48
-0.71
-1
V
Maximum Body-Diode Continuous Current
-4.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2527
583
397
4.3
3033
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
556
6.4
VGS=0V, VDS=0V, f=1MHz
2.1
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
47
8
57
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-15A
14
12
8
V
GS=-10V, VDS=-15V, RL=1.0Ω,
RGEN=3Ω
tD(off)
tf
54
87
26.1
12.3
trr
IF=-15A, dI/dt=100A/µs
IF=-15A, dI/dt=100A/µs
32
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Note *: This device is guaranteed RG 100% tested after date code 8V11 (Jan 1st 2008)
Rev10: May. 2012
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AO4423
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
40
30
20
10
0
-4.5V
-6V
VDS=-5V
-4V
-10V
40
30
20
10
0
125°C
25°C
-3.5V
VGS=-3V
0
1
2
3
4
5
2
2.5
3
3.5
-VGS(Volts)
4
4.5
5
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
10
8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
VGS=-20V
ID = -15A
VGS=-6V
VGS=-10V
ID = -15A
VGS=-10V
VGS=-20V
6
VGS=-6V
ID = -10A
4
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
Temperature (°C)
-ID (A)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.0E+01
16
ID=-15A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
14
12
10
8
125°C
125°C
6
25°C
25°C
4
4
8
12
16
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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AO4423
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4000
10
8
3500
3000
2500
2000
1500
1000
500
VDS=-15V
ID=-15A
Ciss
6
4
Coss
2
Crss
0
0
0
10
20
30
0
10
20
30
40
50
-Qg (nC)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000.0
10000
1000
100
10
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100.0
10.0
1.0
10µs
100µs
1ms
10ms
1s
0.1s
10s
0.1
DC
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001
0.001
0.1
10
1000
Pulse Width (s)
0.1
1
10
100
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
-V (Volts)
Figure 9: MaximumDFSorward Biased Safe
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=40°C/W
PD
0.1
0.01
Ton
T
Single Pulse
Pulse Width (s)
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
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