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AO4406 [FREESCALE]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
AO4406
型号： AO4406
厂家： Freescale    Freescale
描述：

N-Channel Enhancement Mode Field Effect Transistor
N沟道增强型网络场效晶体管

晶体 晶体管
文件： 总7页 (文件大小：372K)
中文：  中文翻译
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AO4406  
N-Channel Enhancement Mode Field  
Effect Transistor  
General Description  
, low gate charge and  
The AO4406 uses advanced trench technology to provide excellent RDS(ON)  
operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for  
notebook CPU core DC-DC conversion.  
Features  
VDS (V) = 30V  
ID = 11.5A  
R
DS(ON) < 14mΩ (VGS = 10V)  
RDS(ON) < 16.5mΩ (VGS = 4.5V)  
RDS(ON) < 26mΩ (VGS = 2.5V)  
D
S
S
S
S
G
D
D
D
D
G
SOIC-8  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
V
VDS  
Drain-Source Voltage  
30  
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
11.5  
9.6  
80  
25  
78  
3
2.1  
V
TA=25°C  
TA=70°C  
A
ID  
Pulsed Drain Current B  
Avalanche Current B,E  
IDM  
IAV  
EAV  
A
mJ  
Repetitive Avalanche Energy B,E L=0.1mH  
TA=25°C  
Power Dissipation  
PD  
W
TA=70°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
23  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
t ≤ 10s  
Steady-State  
Steady-State  
RθJA  
48  
65  
RθJL  
12  
16  
1 / 7  
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AO4406  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250µA, VGS=0V  
30  
V
VDS=24V, VGS=0V  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
IGSS  
VGS(th)  
ID(ON)  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
V
DS=0V, VGS= ±12V  
VDS=VGS ID=250µA  
GS=4.5V, VDS=5V  
100  
1.5  
nA  
V
A
0.8  
60  
1
V
VGS=10V, ID=12A  
11.5  
16  
13.5  
19.5  
38  
14  
19.2  
16.5  
26  
mΩ  
TJ=125°C  
RDS(ON)  
Static Drain-Source On-Resistance  
mΩ  
mΩ  
S
V
A
VGS=4.5V, ID=10A  
VGS=2.5V, ID=8A  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
Maximum Body-Diode Continuous Current  
VDS=5V, ID=10A  
25  
IS=10A,VGS=0V  
0.83  
1
4.5  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
1630  
201  
142  
0.8  
pF  
pF  
pF  
Ω
VGS=0V, VDS=15V, f=1MHz  
VGS=0V, VDS=0V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
18  
2.5  
5.5  
4
5
32  
5
nC  
nC  
nC  
ns  
ns  
ns  
ns  
V
GS=4.5V, VDS=15V, ID=11.5A  
VGS=10V, VDS=15V, RL=1.2Ω,  
RGEN=3Ω  
tD(off)  
tf  
trr  
Qrr  
IF=10A, dI/dt=100A/µs  
IF=10A, dI/dt=100A/µs  
18,7  
19.8  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
nC  
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in  
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve  
provides a single pulse rating.  
2 / 7  
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AO4406  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
50  
30  
10V  
4.5V  
2.5V  
VDS=5V  
3V  
25  
20  
15  
10  
5
40  
30  
20  
10  
0
2V  
125°C  
25°C  
2
VGS=1.5V  
3
0
0
1
2
4
5
0
0.5  
1
1.5  
GS(Volts)  
Figure 2: Transfer Characteristics  
2.5  
3
V
DS (Volts)  
V
Fig 1: On-Region Characteristics  
30  
1.8  
1.6  
1.4  
1.2  
1
VGS=10V  
ID=10A  
25  
20  
15  
10  
5
VGS=2.5V  
VGS=4.5V  
VGS=4.5V  
VGS=2.5V  
V
GS
=10V  
0
0.8  
0
5
10  
15  
D (A)  
20  
25  
30  
0
25  
50  
75  
100  
125  
150  
175  
I
Temperature (°C)  
Figure 4: On-Resistance vs. Junction  
Temperature  
Figure 3: On-Resistance vs. Drain Current and  
Gate Voltage  
40  
1.0E+01  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
VGS=0V  
125°C  
ID=10A  
30  
20  
10  
0
125°C  
25°C  
25°C  
0.0  
0.2  
0.4  
0.6  
SD (Volts)  
0.8  
1.0  
1.2  
V
0.00  
2.00  
4.00  
6.00  
8.00  
10.00  
V
GS (Volts)  
Figure 6: Body-Diode Characteristics  
Figure 5: On-Resistance vs. Gate-Source Voltage  
3 / 7  
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AO4406  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
5
4
3
2
1
0
2500  
2250  
2000  
1750  
1500  
1250  
1000  
750  
VDS=15V  
ID=11.5A  
Ciss  
Coss  
Crss  
500  
250  
0
0
4
8
12  
Qg (nC)  
16  
20  
24  
0
5
10  
15  
DS (Volts)  
20  
25  
30  
V
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
100.0  
RDS(ON)  
50  
TJ(Max)=150°C  
TA=25°C  
1ms  
40  
30  
20  
10  
0
limited  
100µs  
10.0  
10ms  
0.1s  
1s  
1.0  
0.1  
10s  
TJ(Max)=150°C  
TA=25°C  
DC  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
Pulse Width (s)  
V
DS (Volts)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note E)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
10  
D=Ton/T  
J,PK=TA+PDM.ZθJA.RθJA  
θJA=40°C/W  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
T
R
1
0.1  
PD  
T
on  
Single Pulse  
T
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance  
4 / 7  
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AO4406  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
4
3
2
1
0
70  
60  
50  
40  
30  
20  
10  
TA=25°C  
L ⋅ ID  
BV −VDD  
tA  
=
10s  
Steady-  
State  
0
0.00001  
0.0001  
0.001  
25  
50  
75  
TCASE (°C)  
Figure 13: Power De-rating (Note A)  
100  
125  
150  
Time in avalanche, tA (s)  
Figure 12: Avalanche capability  
5 / 7  
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SO-8 Package Data  
DIMENSIONS IN MILLIMETERS  
DIMENSIONS IN INCHES  
SYMBOLS  
MIN  
NOM  
MAX  
MIN  
NOM  
MAX  
A
A1  
A2  
b
1.45  
0.00  
- - -  
0.33  
0.19  
4.80  
3.80  
1.50  
- - -  
1.45  
- - -  
- - -  
- - -  
- - -  
1.27 BSC  
- - -  
- - -  
- - -  
1.55  
0.10  
- - -  
0.51  
0.25  
5.00  
4.00  
0.057  
0.000  
- - -  
0.013  
0.007  
0.189  
0.150  
0.059  
- - -  
0.057  
- - -  
- - -  
- - -  
- - -  
0.050 BSC  
- - -  
- - -  
- - -  
0.061  
0.004  
- - -  
0.020  
0.010  
0.197  
0.157  
c
D
E1  
e
E
h
L
aaa  
q
5.80  
0.25  
0.40  
- - -  
0°  
6.20  
0.50  
1.27  
0.10  
8°  
0.228  
0.010  
0.016  
- - -  
0.244  
0.020  
0.050  
0.004  
8°  
- - -  
- - -  
- - -  
- - -  
0°  
NOTE:  
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.  
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD  
2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE  
SPECIFIED  
3. COPLANARITY : 0.10 mm  
4. DIMENSION L IS MEASURED IN GAGE PLANE  
PACKAGE MARKING DESCRIPTION  
RECOMMENDED LAND PATTERN  
NOTE:  
LOGO - AOS LOGO  
4406  
F
A
- PART NUMBER CODE.  
- FAB LOCATION  
- ASSEMBLY LOCATION  
- YEAR CODE  
Y
W
- WEEK CODE.  
L N  
- ASSEMBLY LOT CODE  
SO-8 PART NO. CODE  
PART NO. CODE  
UNIT: mm  
AO4406  
4406  
Rev. A  
6 / 7  
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SO-8 Tape and Reel Data  
SO-8 Carrier Tape  
SO-8 Reel  
SO-8 Tape  
Leader / Trailer  
& Orientation  
7 / 7  
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