AO4407A_10 [AOS]
30V P-Channel MOSFET; 30V P沟道MOSFET![AO4407A_10](http://pdffile.icpdf.com/pdf1/p00193/img/icpdf/AO4407_1090395_icpdf.jpg)
型号: | AO4407A_10 |
厂家: | ![]() |
描述: | 30V P-Channel MOSFET |
文件: | 总5页 (文件大小:192K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AO4407A
30V P-Channel MOSFET
General Description
Product Summary
The AO4407A uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
VDS = -30V
ID = -12A
RDS(ON) < 11mꢀ (VGS = -20V)
RDS(ON) < 13mꢀ (VGS = -10V)
(VGS = -20V)
R
DS(ON) < 17mꢀ (VGS = -6V)
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
-30
V
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain Current B
Avalanche Current G
VGS
±25
-12
V
TA=25°C
TA=70°C
ID
-10
A
IDM
IAR
EAR
-60
-26
Repetitive avalanche energy L=0.3mH G
101
mJ
W
TA=25°C
3.1
Power Dissipation A
TA=70°C
PD
2.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
32
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
40
75
24
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady State
Steady State
60
RθJL
17
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4407A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID = -250µA, VGS = 0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS = -30V, VGS = 0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ = 55°C
TJ=125°C
V
DS = 0V, VGS = ±25V
VDS = VGS ID = -250µA
GS = -10V, VDS = -5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VGS(th)
ID(ON)
-1.7
-60
-2.3
V
A
VGS = -20V, ID = -12A
8.5
11.5
10
11
15
13
17
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS = -10V, ID = -12A
VGS = -6V, ID = -10A
VDS = -5V, ID = -10A
IS = -1A,VGS = 0V
12.7
21
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
-0.7
-1
-3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2060
370
295
2.4
2600
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3.6
39
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
30
4.6
10
11
9.4
24
12
30
22
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-12A
VGS=-10V, VDS=-15V, RL=1.25Ω,
RGEN=3Ω
tD(off)
tf
IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
trr
40
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev10: Nov 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
VDS= -5V
-10V
-6V
-5V
-4.5V
-4V
125°C
2.5
25°C
VGS= -3.5V
4
0
1
2
3
5
0
0.5
1
1.5
2
3
3.5
4
4.5
5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
20
15
10
5
1.8
1.6
1.4
1.2
1.0
0.8
VGS=-20V
ID=-12A
VGS=-6V
VGS=-10V
ID=-12A
VGS=-10V
VGS=-20V
VGS=-6V
ID=-10A
0
0
4
8
12
16
20
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
30
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
ID=-12A
25
20
15
10
5
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-VSD (Volts)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
8
2500
2000
1500
1000
500
VDS=-15V
ID=-12A
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
1000
100
10
10µs
TJ(Max)=150°C
TA=25°C
100µs
1ms
1
10ms
RDS(ON) limited
100ms
0.1
0.01
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.1
0.01
PD
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4407A
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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