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AO4407_10 [AOS]

30V P-Channel MOSFET; 30V P沟道MOSFET
AO4407_10
型号： AO4407_10
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

30V P-Channel MOSFET
30V P沟道MOSFET
文件： 总5页 (文件大小：537K)
中文：  中文翻译
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AO4407  
30V P-Channel MOSFET  
General Description  
Product Summary  
VDS  
-30V  
The AO4407 combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON). This device is ideal for load switch  
and battery protection applications.  
ID (at VGS=-20V)  
RDS(ON) (at VGS=-20V)  
RDS(ON) (at VGS =-10V)  
RDS(ON) (at VGS =-5V)  
-12A  
< 13mΩ  
< 14mΩ  
< 30mΩ  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
Top View  
Bottom View  
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±25  
TA=25°C  
TA=70°C  
-12  
Continuous Drain  
Current  
ID  
-10  
A
Pulsed Drain Current C  
IDM  
-60  
Avalanche Current C  
IAS, IAR  
EAS, EAR  
26  
101  
A
Avalanche energy L=0.3mH C  
TA=25°C  
Power Dissipation B  
mJ  
3.1  
PD  
W
°C  
TA=70°C  
2
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
≤ 10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
Rev 13: July 2010  
www.aosmd.com  
Page 1 of 5  
AO4407  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=-250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
-30  
V
VDS=-30V, VGS=0V  
-1  
µA  
-5  
IDSS  
Zero Gate Voltage Drain Current  
TJ=55°C  
VDS=0V, VGS= ±25V  
VDS=VGS ID=-250µA  
VGS=-10V, VDS=-5V  
VGS=-20V, ID=-12A  
VGS=-10V, ID=-12A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
-2.8  
nA  
V
VGS(th)  
ID(ON)  
-1.7  
-60  
-2.25  
A
8.5  
10  
13  
14  
19  
30  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
mΩ  
TJ=125°C  
12  
VGS=-5V, ID=-7A  
19  
mΩ  
S
VDS=-5V, ID=-10.5A  
IS=-1A,VGS=0V  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
27  
-0.72  
-1  
-4  
V
Maximum Body-Diode Continuous Current  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
2060 2600  
pF  
pF  
pF  
Ω
VGS=0V, VDS=-15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
370  
295  
VGS=0V, VDS=0V, f=1MHz  
1.2  
24  
2.4  
3.6  
36  
SWITCHING PARAMETERS  
Qg  
Qgs  
Qgd  
tD(on)  
tr  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
30  
4.6  
10  
11  
9.4  
24  
12  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
VGS=-10V, VDS=-15V, ID=-12A  
VGS=-10V, VDS=-15V,  
RL=1.25Ω, RGEN=3Ω  
tD(off)  
tf  
trr  
IF=-12A, dI/dt=100A/µs  
IF=-12A, dI/dt=100A/µs  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
30  
22  
40  
ns  
Qrr  
nC  
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
value in any given application depends on the user's specific board design.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initialTJ=25°C.  
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with  
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Rev 13: July 2010  
www.aosmd.com  
Page 2 of 5  
AO4407  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
-10V  
VDS=-5V  
-6V  
-5V  
-4.5V  
125°C  
-4V  
VGS=-3.5V  
4
25°C  
1
2
3
4
5
6
0
1
2
3
5
VGS(Volts)  
-VDS (Volts)  
Fig 1: On-Region Characteristics (Note E)  
Figure 2: Transfer Characteristics (Note E)  
30  
1.6  
1.4  
1.2  
1
25  
20  
15  
10  
5
VGS=-10V  
ID=-12A  
VGS=-5V  
VGS=-5V  
VGS=-10V  
ID=-7A  
0
0.8  
0
5
10  
15  
20  
0
25  
50  
75  
100  
125  
150  
175  
-ID (A)  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
Figure 4: On-Resistance vs. Junction Temperature  
(Note E)  
30  
25  
20  
15  
10  
5
1.0E+01  
ID=-12A  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
125°C  
125°C  
25°C  
25°C  
0.0  
0.2  
0.4  
-VSD (Volts)  
Figure 6: Body-Diode Characteristics (Note E)  
0.6  
0.8  
1.0  
1.2  
2
4
6
8
10  
-VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
Rev 13: July 2010  
www.aosmd.com  
Page 3 of 5  
AO4407  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
3000  
10  
VDS=-15V  
ID=-12A  
2500  
2000  
1500  
1000  
500  
8
Ciss  
6
4
Coss  
2
Crss  
0
0
0
5
10  
15  
Qg (nC)  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
-VDS (Volts)  
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
1000.0  
100.0  
10.0  
1.0  
10000  
1000  
100  
10  
TA=25°C  
10µs  
RDS(ON)  
limited  
100µs  
1ms  
10ms  
10s  
TJ(Max)=150°C  
TA=25°C  
0.1  
DC  
1
0.0  
0.00001  
0.001  
0.1  
10  
1000  
0.01  
0.1  
1
10  
100  
VDS (Volts)  
Pulse Width (s)  
Figure 11: Single Pulse Power Rating Junction-to-  
Ambient (Note F)  
Figure 10: Maximum Forward Biased Safe  
Operating Area (Note F)  
10  
1
D=Ton/T  
TJ,PK=TA+PDM.ZθJA.RθJA  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
RθJA=75°C/W  
0.1  
PD  
0.01  
0.001  
Single Pulse  
0.001  
Ton  
T
0.00001  
0.0001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)  
Rev 13: July 2010  
www.aosmd.com  
Page 4 of 5  
AO4407  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
EAR= 1/2 LIA2R  
BVDSS  
Vds  
Id  
Vgs  
Vds  
+
Vgs  
Vdd  
I AR  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Qrr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
Isd  
I F  
Isd  
Vgs  
dI/dt  
I RM  
+
Vdd  
VDC  
Vdd  
-
Vds  
Rev 13: July 2010  
www.aosmd.com  
Page 5 of 5  

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