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AO4410_10 [AOS]

30V N-Channel MOSFET; 30V N沟道MOSFET
AO4410_10
型号： AO4410_10
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

30V N-Channel MOSFET
30V N沟道MOSFET
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中文：  中文翻译
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AO4410  
30V N-Channel MOSFET  
General Description  
Product Summary  
The AO4410 uses advanced trench technology to  
provide excellent RDS(ON), shoot-through immunity,  
body diode characteristics and ultra-low gate  
resistance. This device is ideally suited for use as a  
low side switch in Notebook CPU core power  
conversion.  
VDS (V) = 30V  
ID = 18A  
(VGS = 10V)  
RDS(ON) < 5.5mΩ (VGS = 10V)  
DS(ON) < 6.2mΩ (VGS = 4.5V)  
R
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
Top View  
Bottom View  
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
30  
±12  
18  
V
Gate-Source Voltage  
VGS  
V
A
TA=25°C  
TA=70°C  
Continuous Drain  
Current AF  
ID  
15  
Pulsed Drain Current B  
IDM  
80  
TA=25°C  
TA=70°C  
3
PD  
W
Power Dissipation  
Avalanche Current B  
2.1  
A
mJ  
°C  
IAR  
30  
Repetitive avalanche energy 0.3mH B  
EAR  
135  
-55 to 150  
Junction and Storage Temperature Range  
TJ, TSTG  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t ≤ 10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
Maximum Junction-to-Lead C  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
30  
V
V
DS=30V, VGS=0V  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
VDS=0V, VGS= ±12V  
VDS=VGS ID=250µA  
VGS=4.5V, VDS=5V  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
100  
1.5  
nA  
V
VGS(th)  
ID(ON)  
0.8  
80  
1.1  
A
V
GS=10V, ID=18A  
4.7  
6.4  
5.5  
7.4  
6.2  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
TJ=125°C  
VGS=4.5V, ID=15A  
VDS=5V, ID=18A  
IS=1A,VGS=0V  
5.2  
mΩ  
S
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
102  
0.64  
1
V
Maximum Body-Diode Continuous Current  
4.5  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
9130 10500  
625  
pF  
pF  
pF  
Ω
VGS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
387  
0.4  
542  
0.8  
VGS=0V, VDS=0V, f=1MHz  
VGS=10V, VDS=15V, ID=18A  
0.2  
SWITCHING PARAMETERS  
Qg(4.5V) Total Gate Charge  
72.4  
13.4  
16.8  
11  
85  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
Qgs  
Qgd  
tD(on)  
tr  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
15  
11  
V
GS=10V, VDS=15V, RL=0.83Ω,  
GEN=3Ω  
7
R
tD(off)  
tf  
99  
135  
19.5  
40  
13  
trr  
IF=18A, dI/dt=100A/µs  
IF=18A, dI/dt=100A/µs  
33  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
22.2  
30  
nC  
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with  
T A=25°C. The value in any given application depends on the user's specific board design.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The  
SOA curve provides a single pulse rating.  
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.  
Rev7: Nov 2010  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
100000  
5
4
3
2
1
0
VDS=15V  
ID=18A  
Ciss  
10000  
1000  
100  
Coss  
Crss  
0
10  
20  
30  
40  
Qg (nC)  
Figure 7: Gate-Charge Characteristics  
50  
60  
70  
80  
90  
0
5
10  
15  
VDS (Volts)  
20  
25  
30  
Figure 8: Capacitance Characteristics  
100.0  
10.0  
1.0  
100  
RDS(ON)  
limited  
TJ(Max)=150°C  
TA=25°C  
10µs  
100µs  
80  
60  
40  
20  
0
1ms  
10ms  
0.1s  
1s  
10s  
DC  
TJ(Max)=150°C  
TA=25°C  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
Pulse Width (s)  
0.1  
1
10  
100  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note E)  
V
DS (Volts)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
10  
1
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
RθJA=40°C/W  
0.1  
PD  
Ton  
T
Single Pulse  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
10V  
2.5V  
VDS=5V  
VGS=2V  
125°C  
25°C  
2
0
1
2
3
4
5
0
0.5  
1
1.5  
2.5  
VDS (Volts)  
VGS(Volts)  
Fig 1: On-Region Characteristics  
Figure 2: Transfer Characteristics  
6.0  
5.5  
5.0  
4.5  
4.0  
1.6  
1.4  
1.2  
1
VGS=4.5V  
ID=18A  
VGS=4.5V  
VGS=10V  
VGS=10V  
0.8  
0
10  
20  
30  
40  
50  
60  
0
25  
50  
75  
100  
125  
150  
175  
ID (A)  
Temperature (°C)  
Figure 4: On-Resistance vs. Junction  
Temperature  
Figure 3: On-Resistance vs. Drain Current and  
Gate Voltage  
16  
1.0E+02  
1.0E+01  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
12  
8
ID=18A  
125°C  
125°C  
25°C  
4
25°C  
0
0.0  
0.2  
0.4  
VSD (Volts)  
Figure 6: Body-Diode Characteristics  
0.6  
0.8  
1.0  
0
2
4
6
8
10  
VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
Gate Charge Test Circuit &Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Vds  
Ig  
Charge  
Resistive Switching TestCircuit& Waveforms  
RL  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
t d(on)  
t
r
t d(off)  
t
f
t on  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
2
EAR=1/2 LI  
AR  
BVDSS  
Vds  
Id  
Vds  
+
Vgs  
Vdd  
IAR  
Vgs  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode RecoveryTest Circuit &Waveforms  
Qrr=- Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
Isd  
trr  
L
IF  
Isd  
dI/dt  
+
IRM  
Vdd  
Vgs  
VDC  
Vdd  
-
Vds  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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