AO4411_11 [AOS]

30V P-Channel MOSFET; 30V P沟道MOSFET
AO4411_11
型号: AO4411_11
厂家: ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述:

30V P-Channel MOSFET
30V P沟道MOSFET

文件: 总6页 (文件大小:614K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
AO4411  
30V P-Channel MOSFET  
General Description  
Product Summary  
VDS  
-30V  
The AO4411 uses advanced trench technology to provide  
excellent RDS(ON), and ultra-low low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications.  
ID (at VGS=-10V)  
RDS(ON) (at VGS=-10V)  
-8A  
< 32m  
< 55mΩ  
RDS(ON) (at VGS = -4.5V)  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D
Top View  
Bottom View  
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
-30  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
TA=25°C  
TA=70°C  
-8  
Continuous Drain  
Current  
ID  
-6.6  
A
Pulsed Drain Current C  
IDM  
-40  
Avalanche Current C  
IAS, IAR  
EAS, EAR  
23  
A
Avalanche energy L=0.1mH C  
TA=25°C  
Power Dissipation B  
26  
3.1  
mJ  
PD  
W
°C  
TA=70°C  
2
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
Rev 11: Nov 2011  
www.aosmd.com  
Page 1 of 6  
AO4411  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=-250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
-30  
V
VDS=-30V, VGS=0V  
-1  
-5  
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
VDS=0V, VGS= ±20V  
VDS=VGS ID=-250µA  
VGS=-10V, VDS=-5V  
VGS=-10V, ID=-8A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
-2.4  
nA  
V
VGS(th)  
ID(ON)  
-1.3  
-40  
-1.85  
A
21  
31.5  
33  
32  
38  
55  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
TJ=125°C  
VGS=-4.5V, ID=-5A  
VDS=-5V, ID=-8A  
IS=-1A,VGS=0V  
mΩ  
S
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
19  
-0.8  
-1  
V
Maximum Body-Diode Continuous Current  
-3.5  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
760  
140  
95  
pF  
pF  
pF  
VGS=0V, VDS=-15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
VGS=0V, VDS=0V, f=1MHz  
1.5  
3.2  
5
SWITCHING PARAMETERS  
Qg(10V) Total Gate Charge  
13.6  
6.7  
2.5  
3.2  
8
16  
8
nC  
nC  
nC  
nC  
ns  
Qg(4.5V) Total Gate Charge  
VGS=-10V, VDS=-15V, ID=-8A  
Qgs  
Qgd  
tD(on)  
tr  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
VGS=-10V, VDS=-15V, RL=1.8,  
RGEN=3Ω  
6
ns  
tD(off)  
tf  
17  
5
ns  
ns  
trr  
IF=-8A, dI/dt=100A/µs  
IF=-8A, dI/dt=100A/µs  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
15  
ns  
Qrr  
nC  
9.7  
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
value in any given application depends on the user's specific board design.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initialTJ=25°C.  
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with  
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Rev 11: Nov 2011  
www.aosmd.com  
Page 2 of 6  
AO4411  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
-10V  
-6V  
-5V  
-4.5V  
VDS=-5V  
-4V  
-3.5V  
VGS=-3V  
4
125°C  
25°C  
0
0
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
1
2
3
5
-VGS(Volts)  
Figure 2: Transfer Characteristics (Note E)  
-VDS (Volts)  
Fig 1: On-Region Characteristics (Note E)  
50  
1.8  
1.6  
1.4  
1.2  
1
VGS=-10V  
ID=-8A  
45  
40  
35  
30  
25  
20  
15  
10  
VGS=-4.5V  
VGS=-4.5V  
ID=-5A  
VGS=-10V  
0.8  
0
5
10  
15  
20  
0
25  
50  
75  
100  
125  
150  
175  
-ID (A)  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
Figure 4: On-Resistance vs. JunctionTemperature  
(Note E)  
80  
60  
40  
20  
0
1.0E+02  
1.0E+01  
ID=-8A  
1.0E+00  
125°C  
25°C  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
125°C  
25°C  
0.0  
0.2  
0.4  
-VSD (Volts)  
Figure 6: Body-Diode Characteristics (Note E)  
0.6  
0.8  
1.0  
1.2  
2
4
6
8
10  
-VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
Rev 11: Nov 2011  
www.aosmd.com  
Page 3 of 6  
AO4411  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
1200  
10  
VDS=-15V  
ID=-8A  
1000  
800  
600  
400  
200  
0
8
Ciss  
6
4
Coss  
2
Crss  
0
0
5
10  
15  
20  
25  
30  
0
2
4
6
8
10  
12  
14  
Qg (nC)  
-VDS (Volts)  
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
100.0  
100.0  
10µs  
100µs  
10.0  
1.0  
TA=25°C  
RDS(ON)  
limited  
TA=150°C  
1ms  
10ms  
TA=100°C  
0.1  
TJ(Max)=150°C  
TA=25°C  
10s  
DC  
TA=125°C  
0.0  
10.0  
0.01  
0.1  
1
10  
100  
1
10  
100  
1000  
-VDS (Volts)  
Time in avalanche, tA (µs)  
Figure 9: Single Pulse Avalanche capability (Note C)  
Figure 10: Maximum Forward Biased Safe  
Operating Area (Note F)  
10000  
1000  
100  
10  
TA=25°C  
1
0.00001  
0.001  
0.1  
Pulse Width (s)  
10  
1000  
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)  
Rev 11: Nov 2011  
www.aosmd.com  
Page 4 of 6  
AO4411  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
In descending order  
D=Ton/T  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
1
0.1  
RθJA=75°C/W  
PD  
0.01  
Single Pulse  
0.001  
Ton  
T
0.001  
0.00001  
0.0001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)  
Rev 11: Nov 2011  
www.aosmd.com  
Page 5 of 6  
AO4411  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
-
-10V  
-
VDCC  
Qgs  
Qgd  
+
Vds  
VDCC  
+
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
toff  
ton  
t
td(off)  
td(on)  
t
r
f
Vgs  
-
90%  
10%  
DUT  
Vdd  
Vgs  
VDC  
+
Rg  
Vgs  
Vds  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
EAR= 1/2 LIA2R  
L
Vds  
Id  
Vgs  
Vds  
-
BVDSS  
Vgs  
Vdd  
VDC  
+
Id  
Rg  
I AR  
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Qrr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
-Isd  
-IF  
Isd  
Vgs  
dI/dt  
-IRM  
+
Vdd  
VDC  
Vdd  
-
-Vds  
Rev 11: Nov 2011  
www.aosmd.com  
Page 6 of 6  

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