AO4415 [AOS]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AO4415 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总4页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4415
30V P-Channel MOSFET
General Description
Product Summary
The AO4415 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications.
VDS (V) = -30V
ID = -8 A (VGS = -20V)
RDS(ON) < 26mΩ (VGS = -20V)
R
DS(ON) < 35mΩ (VGS = -10V)
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
V
A
TA=25°C
TA=70°C
-8
-6.6
Continuous Drain
Current A
ID
Pulsed Drain Current B
IDM
-40
TA=25°C
TA=70°C
3
PD
W
°C
Power Dissipation A
2.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
24
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Steady-State
Steady-State
54
75
Maximum Junction-to-Lead C
RθJL
21
30
Alpha & Omega Semiconductor, Ltd.
AO4415
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
V
DS=-24V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±25V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3.5
nA
V
VGS(th)
ID(ON)
-1.7
40
-2.8
A
V
GS=-20V, ID=-8A
21.5
29
26
35
35
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-8A
VGS=-6V, ID=-5A
VDS=-5V, ID=-8A
IS=-1A,VGS=0V
28.5
41
mΩ
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
11.5
-0.76
-1
V
Maximum Body-Diode Continuous Current
-4.2
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
893
204
151
4
1100
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
16.6
3.2
21
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-8A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5.2
10.5
7.3
V
GS=-10V, VDS=-15V, RL=1.8Ω,
RGEN=3Ω
tD(off)
tf
15.1
8.6
trr
IF=-8A, dI/dt=100A/µs
IF=-8A, dI/dt=100A/µs
21
26
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
10.7
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
30
25
20
15
10
5
-10V
VDS=-5V
-7V
-6V
-5V
125°C
-4.5V
VGS=-4V
25°C
0
0
0
1
2
3
4
5
2.5
3
3.5
4
4.5
5
5.5
6
6.5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
60
55
50
45
40
35
30
25
20
15
10
1.60
1.40
1.20
1.00
0.80
ID=-8A
VGS=-10V
VGS=-6V
VGS=-20V
VGS=-10V
VGS=-20V
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=-8A
80
125°C
70
60
1.0E-03
G
50
1.0E-04
40
25°C
125°C
1.0E-05
1.0E-06
30
25°C
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
4
8
12
-VGS (Volts)
16
20
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
8
VDS=-15V
ID=-8A
1250
1000
750
500
250
0
Ciss
6
4
Coss
2
Crss
0
0
4
8
12
16
20
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
30
20
10
0
TJ(Max)=150°C, T A=25°C
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
100µs
limited
0.1s
1ms
10ms
1s
10s
1
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
1
PD
0.1
NG
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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