AO4418 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管![AO4418](http://pdffile.icpdf.com/pdf1/p00169/img/icpdf/AO441_946453_icpdf.jpg)
型号: | AO4418 |
厂家: | ![]() |
描述: | N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总4页 (文件大小:110K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AO4418
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4418 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.Standard Product AO4418 is Pb-free
(meets ROHS & Sony 259 specifications). AO4418L
is a Green Product ordering option. AO4418 and
AO4418L are electrically identical.
VDS (V) = 30V
ID = 11.5A (VGS = 20V)
RDS(ON) < 14mΩ (VGS = 20V)
R
DS(ON) < 17mΩ (VGS = 10V)
RDS(ON) < 40mΩ (VGS = 4.5V)
D
S
S
S
S
G
D
D
D
D
G
SOIC-8
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain CurrentB
±25
11.5
9.7
TA=25°C
TA=70°C
A
ID
IDM
40
TA=25°C
TA=70°C
3
PD
W
Power Dissipation
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
31
59
Max
40
75
Units
°C/W
°C/W
°C/W
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
Maximum Junction-to-LeadC
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
AO4418
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±25V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1.5
40
2.4
VGS=10V, VDS=5V
A
V
GS=20V, ID=11.5A
9.8
14.2
12.3
32
14
18
17
40
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=10V, ID=10A
VGS=4.5V, ID=5A
VDS=5V, ID=10A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
14
22
S
V
A
0.76
1
Maximum Body-Diode Continuous Current
4.3
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
758
180
128
0.7
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
16.6
8.6
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=11.5A
2.5
4.9
5.4
5.1
ns
VGS=10V, VDS=15V, RL=1.3Ω,
GEN=3Ω
R
tD(off)
tf
14.4
3.7
ns
ns
trr
IF=11.5A, dI/dt=100A/µs
IF=11.5A, dI/dt=100A/µs
16.9
6.6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3: June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
30
25
20
15
10
5
10V
6V
7V
VDS=5V
5V
3.5V
125°C
25°C
VGS=3V
0
0
0
1
2
3
4
5
2
2.5
3
3.5
4
4.5
5
5.5
VDS (Volts)
Fig 1: On-Region Characteristics
V
GS(Volts)
Figure 2: Transfer Characteristics
45
40
35
30
25
20
15
10
5
1.8
1.6
1.4
1.2
1
ID=10A
V
GS=4.5V
VGS=10V
VGS=20V
VGS=10V
VGS=20V
20 25
0.8
0
5
10
15
D (A)
30
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
50
40
30
20
10
0
ID=10A
125°C
25°C
125°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
5
10
15
20
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
8
VDS=15V
ID=11.5A
1000
800
600
400
200
0
Ciss
6
4
Coss
2
Crss
0
0
4
8
12
16
20
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
40
30
20
10
0
100µs
1ms
10µs
10ms
0.1s
1s
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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