AO4420 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AO4420 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总4页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4420
30V N-Channel MOSFET
General Description
Product Summary
The AO4420 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is
suitable for use as a synchronous switch in PWM
applications.
VDS (V) = 30V
ID = 13.7A (VGS = 10V)
RDS(ON) < 10.5mΩ (VGS = 10V)
R
DS(ON) < 12mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
±12
V
Gate-Source Voltage
VGS
V
A
TA=25°C
TA=70°C
13.7
9.7
Continuous Drain
Current A
ID
Pulsed Drain Current B
IDM
60
TA=25°C
TA=70°C
3.1
PD
W
°C
Power Dissipation
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
28
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Steady-State
Steady-State
54
75
Maximum Junction-to-Lead C
RθJL
21
30
Alpha & Omega Semiconductor, Ltd.
AO4420
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=24V, VGS=0V
0.004
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=13.7A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
2
nA
V
VGS(th)
ID(ON)
0.6
40
1.1
A
8.3
12.5
9.7
10.5
15
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=12.7A
VDS=5V, ID=13.7A
IS=1A,VGS=0V
12
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
37
0.76
1
5
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
3656
256
4050
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
168
0.86
1.1
36
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
30.5
4.6
nC
nC
nC
ns
ns
ns
ns
V
V
GS=4.5V, VDS=15V, ID=13.7A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.6
5.5
9
GS=10V, VDS=15V, RL=1.1Ω,
3.4
7
R
GEN=3Ω
tD(off)
tf
49.8
5.9
75
11
28
16
trr
IF=13.7A, dI/dt=100A/µs
IF=13.7A, dI/dt=100A/µs
22.5
12.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 8 : Nov 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
30
25
20
15
10
5
VGS=5V
10V
4.5V
50
40
30
20
10
0
VGS =2.5V
125°C
25°C
2.0
VGS =2.0V
0
0.0
0.5
1.0
1.5
2.5
3.0
0
1
2
3
4
5
VGS(Volts)
VDS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
ID=13.7A
12
11
10
9
VGS=4.5V
VGS =4.5V
VGS=10V
8
VGS =10V
7
0
25
50
75
100
125
150
175
6
Temperature (°C)
0
5
10
15
20
25
30
Figure 4: On-Resistance vs. Junction
Temperature
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
30
25
20
15
10
5
ID=13.7A
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
SD(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
10
V
V
GS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
10000
1000
100
VDS=15V
Ciss
ID=13.7A
4
3
2
1
0
Coss
Crss
0
5
10
15
VDS(Volts)
Figure 8: Capacitance Characteristics
20
25
30
0
10
20
Qg (nC)
30
40
Figure 7: Gate-Charge Characteristics
50
100
10
1
10µs
RDS(ON)
limited
40
30
20
10
0
100µs
10ms
1ms
0.1s
1s
10s
TJ(Max) =150°C
TA =25°C
DC
0.1
0.1
1
10
100
0.01
0.1
1
10
100
1000
VDS(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=40°C/W
1
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
100
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Alpha & Omega Semiconductor, Ltd.
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