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AO4418_07 [AOS]

N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
AO4418_07
型号： AO4418_07
厂家： ALPHA & OMEGA SEMICONDUCTORS    ALPHA & OMEGA SEMICONDUCTORS
描述：

N-Channel Enhancement Mode Field Effect Transistor
N沟道增强型网络场效晶体管

晶体 晶体管
文件： 总5页 (文件大小：158K)
中文：  中文翻译
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AO4418  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4418 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications.  
Standard Product AO4418 is Pb-free (meets ROHS  
& Sony 259 specifications).  
VDS (V) = 30V  
ID = 11.5A (VGS = 20V)  
RDS(ON) < 14mΩ (VGS = 20V)  
R
DS(ON) < 17mΩ (VGS = 10V)  
RDS(ON) < 40mΩ (VGS = 4.5V)  
UIS TESTED!  
Rg,Ciss,Coss,Crss Tested  
D
S
S
S
G
D
D
D
D
G
SOIC-8  
S
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
30  
V
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current AF  
Pulsed Drain CurrentB  
±25  
11.5  
9.7  
TA=25°C  
TA=70°C  
A
ID  
IDM  
40  
TA=25°C  
TA=70°C  
3
PD  
W
Power Dissipation  
Avalanche CurrentB  
2.1  
IAR  
A
20  
Repetitive avalanche energy 0.3mHB  
EAR  
mJ  
°C  
60  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
59  
Max  
40  
75  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-AmbientAF  
Maximum Junction-to-AmbientA  
Maximum Junction-to-LeadC  
t ≤ 10s  
Steady-State  
Steady-State  
RθJA  
RθJL  
16  
24  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4418  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
STATIC PARAMETERS  
BVDSS  
Drain-Source Breakdown Voltage  
ID=250µA, VGS=0V  
30  
V
VDS=30V, VGS=0V  
1
5
IDSS  
Zero Gate Voltage Drain Current  
µA  
TJ=55°C  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
V
DS=0V, VGS= ±25V  
100  
3
nA  
V
VGS(th)  
ID(ON)  
VDS=VGS ID=250µA  
1.5  
40  
2.4  
VGS=10V, VDS=5V  
A
V
GS=20V, ID=11.5A  
9.8  
14.2  
12.3  
32  
14  
18  
17  
40  
mΩ  
TJ=125°C  
RDS(ON)  
Static Drain-Source On-Resistance  
mΩ  
mΩ  
VGS=10V, ID=10A  
VGS=4.5V, ID=5A  
VDS=5V, ID=10A  
IS=1A,VGS=0V  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
14  
22  
S
V
A
0.76  
1
Maximum Body-Diode Continuous Current  
4.3  
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
758  
180  
128  
0.7  
910  
pF  
pF  
pF  
Ω
V
GS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
180  
VGS=0V, VDS=0V, f=1MHz  
0.3  
1.1  
SWITCHING PARAMETERS  
Qg(10V)  
Total Gate Charge  
Total Gate Charge  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
16.6  
8.6  
20  
nC  
nC  
nC  
nC  
ns  
Qg(4.5V)  
Qgs  
Qgd  
tD(on)  
tr  
V
GS=10V, VDS=15V, ID=11.5A  
2.5  
4.9  
5.4  
5.1  
ns  
VGS=10V, VDS=15V, RL=1.3Ω,  
GEN=3Ω  
R
tD(off)  
tf  
14.4  
3.7  
ns  
ns  
trr  
IF=11.5A, dI/dt=100A/µs  
IF=11.5A, dI/dt=100A/µs  
16.9  
6.6  
22  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
Qrr  
nC  
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The  
value in any given application depends on the user's specific board design.  
B: Repetitive rating, pulse width limited by junction temperature.  
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA  
curve provides a single pulse rating.  
F.The current rating is based on the t ≤ 10s thermal resistance rating.  
Rev 6: July 2007  
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4418  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
10V  
6V  
7V  
VDS=5V  
5V  
3.5V  
125°C  
25°C  
VGS=3V  
0
0
0
1
2
3
4
5
2
2.5  
3
3.5  
4
4.5  
5
5.5  
V
DS (Volts)  
V
GS(Volts)  
Fig 1: On-Region Characteristics  
Figure 2: Transfer Characteristics  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.8  
1.6  
1.4  
1.2  
1
ID=10A  
V
GS=4.5V  
VGS=10V  
VGS=20V  
VGS=10V  
VGS=20V  
20 25  
0.8  
0
5
10  
15  
D (A)  
30  
0
25  
50  
75  
100  
125  
150  
175  
I
Temperature (°C)  
Figure 4: On-Resistance vs. Junction  
Temperature  
Figure 3: On-Resistance vs. Drain Current and  
Gate Voltage  
60  
1.0E+01  
1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
50  
40  
30  
20  
10  
0
ID=10A  
125°C  
25°C  
125°C  
25°C  
0.0  
0.2  
0.4  
VSD (Volts)  
Figure 6: Body-Diode Characteristics  
0.6  
0.8  
1.0  
0
5
10  
15  
20  
V
GS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4418  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
1200  
10  
8
VDS=15V  
ID=11.5A  
1000  
800  
600  
400  
200  
0
Ciss  
6
4
Coss  
2
Crss  
0
0
4
8
12  
16  
20  
0
5
10  
15  
DS (Volts)  
20  
25  
30  
Qg (nC)  
Figure 7: Gate-Charge Characteristics  
V
Figure 8: Capacitance Characteristics  
100.0  
10.0  
1.0  
50  
TJ(Max)=150°C  
TA=25°C  
RDS(ON)  
limited  
40  
30  
20  
10  
0
10µs  
100µs  
1ms  
TJ(Max)=150°C  
TA=25°C  
0.1s 10ms  
DC  
10s  
1s  
0.1  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
Pulse Width (s)  
VDS (Volts)  
Figure 10: Single Pulse Power Rating Junction-to-  
Ambient (Note E)  
Figure 9: Maximum Forward Biased Safe  
Operating Area (Note E)  
10  
1
D=Ton/T  
J,PK=TA+PDM.ZθJA.RθJA  
RθJA=40°C/W  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
T
PD  
0.1  
Ton  
T
Single Pulse  
0.001  
0.01  
0.00001  
0.0001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width (s)  
Figure 11: Normalized Maximum Transient Thermal Impedance  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  
AO4418  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Vds  
Ig  
Charge  
Resistive Switching Test Circuit& Waveforms  
RL  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
t d(on)  
t
r
t d(off)  
t
f
t on  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
2
EAR= 1/2 LI  
AR  
BVDSS  
Vds  
Id  
Vds  
+
Vgs  
Vdd  
IAR  
Vgs  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode RecoveryTest Circuit & Waveforms  
Qrr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
Isd  
trr  
L
IF  
Isd  
dI/dt  
+
IRM  
Vdd  
Vgs  
VDC  
Vdd  
-
Vds  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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