AO4419L [AOS]
Transistor;
| 型号： | AO4419L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总6页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4419
30V P-Channel MOSFET
General Description
Product Summary
VDS
-30V
The AO4419 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-10V)
-9.7A
R
DS(ON) (at VGS=-10V)
< 20mΩ
< 35mΩ
RDS(ON) (at VGS = -4.5V)
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±20
TA=25°C
TA=70°C
-9.7
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
A
-7.8
IDM
-70
IAS, IAR
EAS, EAR
-27
A
Avalanche energy L=0.1mH C
36
mJ
TA=25°C
Power Dissipation B
TA=70°C
3.1
PD
W
°C
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
RθJA
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Steady-State
Steady-State
59
75
RθJL
16
24
Rev 6: May 2011
www.aosmd.com
Page 1 of 6
AO4419
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
V
DS=0V, VGS= ±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-9.7A
-1.5
-70
-2.0
A
16.5
24
20
29
35
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-7A
26
mΩ
S
VDS=-5V, ID=-9.7A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
27
-0.75
-1
-4
V
Maximum Body-Diode Continuous Current
Pulsed Body-Diode CurrentC
A
ISM
-70
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1040
180
125
4
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
2
6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
19
9.6
3.6
4.6
10
5.5
26
9
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
V
GS=-10V, VDS=-15V, ID=-9.7A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=1.5Ω,
GEN=3Ω
ns
R
tD(off)
tf
ns
ns
trr
IF=-9.7A, dI/dt=500A/µs
IF=-9.7A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11.5
25
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: May 2011
www.aosmd.com
Page 2 of 6
AO4419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
40
30
20
10
0
VDS=-5V
-10V
-7V
-5V
-4.5V
-3.5V
125°C
25°C
4
VGS=-3.0V
4
0
1
2
3
5
0
1
2
3
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
35
1.6
1.4
1.2
1
30
25
20
15
10
VGS=-10V
ID=-9.7A
VGS=-4.5V
VGS=-10V
VGS=-4.5V
ID=-7A
0.8
0
25
50
75
100
125
150
175
0
5
10
15
20
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
50
40
30
20
10
1.0E+02
1.0E+01
ID=-9.7A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 6: May 2011
www.aosmd.com
Page 3 of 6
AO4419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
10
VDS=-15V
ID=-9.7A
1400
1200
1000
800
600
400
200
0
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
g (nC)
15
20
0
5
10
15
-VDS (Volts)
20
25
30
Q
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100
10
1
TA=25°C
TA=100°C
TA=150°C
100.0
10.0
1.0
10µs
RDS(ON)
limited
100µs
1ms
TA=125°C
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
0.0
0.01
0.1
1
10
100
1
10
100
1000
Time in avalanche, tA (µs)
-VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note
C)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
1000
100
10
TA=25°C
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 6: May 2011
www.aosmd.com
Page 4 of 6
AO4419
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=75°C/W
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: May 2011
www.aosmd.com
Page 5 of 6
AO4419
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 6: May 2011
www.aosmd.com
Page 6 of 6
相关型号：
©2020 ICPDF网 联系我们和版权申明