AO4412 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO4412 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4412
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4412 uses advanced trench technology to
provide excellent RDS(ON) and ultra low gate charge for
use has a fast high side switch. The source leads are
separated to allow a Kelvin connection to the source,
which may be used to bypass the source
VDS (V) = 30V
ID = 8.5A
(VGS = 10V)
RDS(ON) < 26mΩ (VGS = 10V)
RDS(ON) < 34mΩ (VGS = 4.5V)
inductance.Standard product AO4412 is Pb-free
(meets ROHS & Sony 259 specifications). AO4412L
is a Green Product ordering option. AO4412 and
AO4412L are electrically identical.
D
S
S
S
S
G
D
D
D
D
G
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
V
A
TA=25°C
TA=70°C
8.5
ID
7.1
Pulsed Drain Current B
IDM
60
3
TA=25°C
TA=70°C
PD
W
Power Dissipation
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
59
75
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
AO4412
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
V
DS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8.5A
100
3
nA
V
VGS(th)
ID(ON)
1
1.8
22
30
A
26
34
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
mΩ
S
V
V
GS=4.5V, ID=5A
DS=5V, ID=5A
28
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.76
1
4
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
590
162
40
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.45
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6.04
1.46
2.56
3.7
nC
nC
nC
ns
ns
ns
ns
V
GS=4.5V, VDS=15V, ID=8.5A
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
3.5
tD(off)
tf
14.9
2.5
trr
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
26
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
20
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
10V
3V
VDS=5V
4.5V
2.5V
125°C
25°C
2V
VGS=1.5V
4
4
0
0
0
1
2
3
5
0
0.5
1
1.5
GS(Volts)
2
2.5
3
V
DS (Volts)
V
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
60
50
40
30
20
10
1.8
1.6
1.4
1.2
1
VGS=2.5V
VGS=4.5V
VGS=10V
VGS=2.5V
V
GS=4.5V
VGS=10V
0.8
0
5
10
D (A)
15
20
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
70
60
50
40
30
20
10
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=5A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
0
2
4
V
6
8
10
Figure 6: Body-Diode Characteristics
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4412
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
4
3
2
1
0
VDS=15V
ID=8.5A
1200
1000
800
600
400
200
0
Ciss
Crss
Coss
0
1
2
3
4
5
6
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
40
30
20
10
0
1ms
10ms
0.1s
1s
10s
DC
10
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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