AO4413A [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO4413A |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4413A
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4413A uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
Standard product AO4413A is Pb-free (meets ROHS
& Sony 259 specifications). AO4413AL is a Green
Product ordering option. AO4413A and AO4413AL
are electrically identical.
VDS (V) = -30V
ID = -15A
(VGS = -10V)
RDS(ON) < 7mΩ (VGS = -20V)
RDS(ON) < 8.5mΩ (VGS = -10V)
SOIC-8
Top View
D
S
S
S
G
D
D
D
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±25
-15
V
A
TA=25°C
TA=70°C
ID
-12.8
-80
Pulsed Drain Current B
IDM
TA=25°C
TA=70°C
3
PD
W
Power Dissipation A
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
32
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
62
75
RθJL
18
24
Alpha & Omega Semiconductor, Ltd.
AO4413A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS=±25V
DS=VGS ID=-250µA
GS=-10V, VDS=-5V
GS=-20V, ID=-15A
±100
-3.5
nA
V
VGS(th)
ID(ON)
-1.5
-60
-2.2
5.5
A
7
mΩ
TJ=125°C
8.7
8.5
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
VGS=-10V, ID=-15A
6.6
8.2
VGS=-6V, ID=-10A
VDS=-5V, ID=-15A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
48
S
V
A
-0.72
-1
5
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
4245
983
689
12
5500
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
18
90
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
69
15.2
18.8
16.5
23.5
116
82
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-15A
VGS=-10V, VDS=-15V, RL=1.0Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=-15A, dI/dt=100A/µs
IF=-15A, dI/dt=100A/µs
59
77
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
55
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. Rev 0: July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4413A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
25
20
15
10
5
-4.5V
-5V
-10V
VDS=-5V
25
20
15
10
5
-4V
125°C
VGS=-3.5V
25°C
4
0
0
0
1
2
3
4
5
2
2.5
3
3.5
4.5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
12
10
8
1.6
1.4
1.2
1
VGS=-20V
ID=-15A
VGS=-10V
ID=-15A
VGS=-6V
VGS=-6V
ID=-10A
VGS=-10V
6
VGS=-20V
25
4
0.8
0
5
10
15
20
30
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.0E+01
30
ID=-15A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
25
20
15
10
5
125°C
125°C
25°C
25°C
0
4
8
12
16
20
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4413A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6000
10
8
VDS=-15V
ID=-15A
5000
4000
3000
2000
1000
0
Ciss
6
4
Coss
2
Crss
0
0
10
20
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
70
0
5
10
15
-VDS (Volts)
20
25
30
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
30
20
10
0
1ms
10ms
0.1s
1s
10s
TJ(Max)=150°C
TA=25°C
DC
0.001
0.01
0.1
1
10
100
1000
0.1
Pulse Width (s)
0.1
1
10
100
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
-V (Volts)
Figure 9: MaximumDFSorward Biased Safe
Operating Area (Note E)
10
1
In descending order
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Ton
10
Single Pulse
T
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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