AO4413 [AOS]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AO4413 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：567K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4413
30V P-Channel MOSFET
General Description
Product Summary
VDS
-30V
The AO4413 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge with a
25V gate rating. This device is suitable for use as a load
switch or in PWM applications.
ID (at VGS=-20V)
-15A
R
DS(ON) (at VGS=-20V)
< 7mΩ
< 8.5mΩ
RDS(ON) (at VGS = -10V)
100% UIS Tested
100% Rg Tested
SOIC-8
D
Top View
Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
-30
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
±25
TA=25°C
TA=70°C
-15
Continuous Drain
Current
ID
-12.8
A
Pulsed Drain Current C
IDM
-120
Avalanche Current C
IAS, IAR
EAS, EAR
50
125
A
Avalanche energy L=0.1mH C
TA=25°C
Power Dissipation B
mJ
3.1
PD
W
°C
TA=70°C
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Steady-State
Steady-State
59
75
RθJL
16
24
Rev 9: Jan 2010
www.aosmd.com
Page 1 of 6
AO4413
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
V
DS=0V, VGS= ±25V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-15A
-1.5
-2.5
-120
A
5.3
7.5
6.4
35
7
9
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-10V, ID=-15A
8.5
mΩ
S
VDS=-5V, ID=-15A
IS=-1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
-0.7
-1
-4
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2310 2890 3500
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
410
280
1.9
585
470
3.8
760
660
5.7
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
40
10
10
51
12
16
16
12
45
22
61
14
22
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-15A
VGS=-10V, VDS=-15V, RL=1.0Ω,
RGEN=3Ω
tD(off)
tf
trr
IF=-15A, dI/dt=100A/µs
IF=-15A, dI/dt=100A/µs
14
9
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
18
11
22
13
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 9: Jan 2010
www.aosmd.com
Page 2 of 6
AO4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
80
60
40
20
0
-10V
VDS=-5V
-6V
80
60
40
20
0
-5V
-4.5V
125°C
25°C
VGS=-4V
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
0
1
2
3
4
5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
10
8
1.6
VGS=-20V
ID=-15A
VGS=-10V
1.4
1.2
1
6
VGS=-10V
ID=-15A
4
VGS=-20V
2
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. JunctionTemperature
(Note E)
20
15
10
5
1.0E+02
1.0E+01
ID=-15A
125°
1.0E+00
25°
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°
25°
0
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
5
10
15
20
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 9: Jan 2010
www.aosmd.com
Page 3 of 6
AO4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
VDS=-15V
ID=-15A
8
4000
3000
2000
1000
0
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
0
10
20
30
Qg (nC)
40
50
60
-VDS (Volts)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000.0
1000.0
100.0
10.0
1.0
10µs
TA=25°C
RDS(ON)
limited
100µs
TA=100°
100.0
TA=150°
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
DC
10s
TA=125°
0.0
10.0
0.01
0.1
1
10
100
1
10
Time in avalanche, tA (µs)
Figure 9: Single Pulse Avalanche capability (Note C)
100
1000
-VDS (Volts)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
TA=25°C
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 9: Jan 2010
www.aosmd.com
Page 4 of 6
AO4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=75°C/W
PD
0.01
Single Pulse
0.001
Ton
T
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 9: Jan 2010
www.aosmd.com
Page 5 of 6
AO4413
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDCC
Qgs
Qgd
+
Vds
VDCC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 9: Jan 2010
www.aosmd.com
Page 6 of 6
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