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AO4406A [FREESCALE]

30V N-Channel MOSFET; 30V N沟道MOSFET
AO4406A
型号： AO4406A
厂家： Freescale    Freescale
描述：

30V N-Channel MOSFET
30V N沟道MOSFET
文件： 总6页 (文件大小：265K)
中文：  中文翻译
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AO4406A  
30V N-Channel MOSFET  
General Description  
provide excellent R  
The AO4406A uses advanced trench technology to  
with low gate charge.  
DS(ON)  
This device is suitable for high side switch in SMPS and  
general purpose applications.  
Features  
VDS  
30V  
13A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 4.5V)  
< 11.5mΩ  
< 15.5mΩ  
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
VGS  
±20  
13  
V
A
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
10.4  
100  
IDM  
IAS  
22  
A
Avalanche energy L=0.1mH C  
TA=25°C  
EAS  
24  
mJ  
3.1  
PD  
W
°C  
Power Dissipation B  
2
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
31  
Max  
40  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
≤ 10s  
RθJA  
Steady-State  
Steady-State  
59  
75  
RθJL  
16  
24  
1 / 6  
www.freescale.net.cn  
AO4406A  
30V N-Channel MOSFET  
Electrical Characteristics (TJ=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Units  
STATIC PARAMETERS  
ID=250µA, VGS=0V  
BVDSS  
Drain-Source Breakdown Voltage  
30  
V
VDS=30V, VGS=0V  
1
IDSS  
Zero Gate Voltage Drain Current  
µA  
5
TJ=55°C  
VDS=0V, VGS=±20V  
VDS=VGS ID=250µA  
VGS=10V, VDS=5V  
VGS=10V, ID=12A  
IGSS  
Gate-Body leakage current  
Gate Threshold Voltage  
On state drain current  
±100  
2.5  
nA  
V
VGS(th)  
ID(ON)  
1.5  
1.9  
100  
A
9.5  
14  
11.5  
17  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
TJ=125°C  
VGS=4.5V, ID=10A  
12.5  
45  
15.5  
mΩ  
S
VDS=5V, ID=12A  
gFS  
VSD  
IS  
Forward Transconductance  
Diode Forward Voltage  
IS=1A,VGS=0V  
0.75  
1
4
V
Maximum Body-Diode Continuous Current  
A
DYNAMIC PARAMETERS  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
610  
88  
760  
125  
70  
910  
160  
100  
2.4  
pF  
pF  
pF  
Ω
VGS=0V, VDS=15V, f=1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate resistance  
40  
VGS=0V, VDS=0V, f=1MHz  
VGS=10V, VDS=15V, ID=12A  
VGS=10V, VDS=15V, RL=1.25Ω,  
0.8  
1.6  
SWITCHING PARAMETERS  
Qg(10V) Total Gate Charge  
11  
5
14  
6.6  
2.4  
3
17  
8
nC  
nC  
nC  
nC  
ns  
Qg(4.5V) Total Gate Charge  
Qgs  
Qgd  
tD(on)  
tr  
Gate Source Charge  
Gate Drain Charge  
Turn-On DelayTime  
Turn-On Rise Time  
Turn-Off DelayTime  
Turn-Off Fall Time  
1.9  
1.8  
2.9  
4.2  
4.4  
9
ns  
RGEN=3Ω  
tD(off)  
tf  
17  
6
ns  
ns  
trr  
IF=12A, dI/dt=500A/µs  
IF=12A, dI/dt=500A/µs  
5.6  
6.4  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
7
8
8
ns  
Qrr  
nC  
9.6  
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The  
value in any given application depends on the user's specific board design.  
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.  
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep  
initialTJ=25°C.  
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.  
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.  
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with  
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.  
2 / 6  
www.freescale.net.cn  
AO4406A  
30V N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
100  
80  
60  
40  
20  
0
30  
25  
20  
15  
10  
5
6V  
10V  
VDS=5V  
5V  
4.5V  
4V  
7V  
125°C  
3.5V  
25°C  
VGS=3V  
0
1
1.5  
2
2.5  
3
3.5  
4
0
1
2
VDS (Volts)  
3
4
5
VGS(Volts)  
Figure 2: Transfer Characteristics (Note E)  
Fig 1: On-Region Characteristics (Note E)  
18  
16  
14  
12  
10  
8
1.8  
VGS=10V  
ID=12A  
1.6  
1.4  
1.2  
1
VGS=4.5V  
VGS=4.5V  
ID=10A  
VGS=10V  
0.8  
6
0
25  
50  
75  
100  
125  
150  
175  
0
5
10  
15  
ID (A)  
20  
25  
30  
Temperature (°C)  
Figure 3: On-Resistance vs. Drain Current and Gate  
Voltage (Note E)  
Figure 4: On-Resistance vs. Junction Temperature  
(Note E)  
30  
25  
20  
15  
10  
5
1.0E+02  
1.0E+01  
ID=12A  
1.0E+00  
125°C  
1.0E-01  
1.0E-02  
1.0E-03  
1.0E-04  
1.0E-05  
125°C  
25°C  
25°C  
0
0.0  
0.2  
0.4  
VSD (Volts)  
Figure 6: Body-Diode Characteristics (Note E)  
0.6  
0.8  
1.0  
1.2  
2
4
6
8
10  
VGS (Volts)  
Figure 5: On-Resistance vs. Gate-Source Voltage  
(Note E)  
3 / 6  
www.freescale.net.cn  
AO4406A  
30V N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
1200  
1000  
800  
600  
400  
200  
0
VDS=15V  
ID=12A  
8
Ciss  
6
4
Coss  
2
Crss  
0
0
3
6
9
12  
15  
0
5
10  
15  
20  
25  
30  
Qg (nC)  
VDS (Volts)  
Figure 7: Gate-Charge Characteristics  
Figure 8: Capacitance Characteristics  
100  
10  
1
1000.0  
100.0  
10.0  
1.0  
TA=25°C  
TA=100°C  
10µs  
TA=150°C  
RDS(ON)  
limited  
100µs  
1ms  
TA=125°C  
10ms  
100ms  
10s  
TJ(Max)=150°C  
TA=25°C  
0.1  
DC  
0.0  
0.01  
0.1  
1
10  
100  
1
10  
Time in avalanche, tA (µs)  
Figure 9: Single Pulse Avalanche capability (Note C)  
100  
1000  
VDS (Volts)  
Figure 10: Maximum Forward Biased  
Safe Operating Area (Note F)  
1000  
100  
10  
TA=25°C  
1
0.00001  
0.0001  
0.001  
0.01  
Pulse Width (s)  
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)  
0.1  
1
10  
100  
1000  
4 / 6  
www.freescale.net.cn  
AO4406A  
30V N-Channel MOSFET  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  
10  
D=Ton/T  
In descending order  
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  
TJ,PK=TA+PDM.ZθJA.RθJA  
1
RθJA=75°C/W  
0.1  
PD  
0.01  
Single Pulse  
0.001  
Ton  
T
0.001  
0.00001  
0.0001  
0.01  
Pulse Width (s)  
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)  
0.1  
1
10  
100  
1000  
5 / 6  
www.freescale.net.cn  
AO4406A  
30V N-Channel MOSFET  
Gate Charge Test Circuit & Waveform  
Vgs  
Qg  
10V  
+
VDC  
+
Qgs  
Qgd  
Vds  
VDC  
-
-
DUT  
Vgs  
Ig  
Charge  
Resistive Switching Test Circuit & Waveforms  
RL  
Vds  
Vds  
90%  
10%  
+
DUT  
Vdd  
Vgs  
VDC  
Rg  
-
Vgs  
Vgs  
td(on)  
t
r
td(off)  
t
f
ton  
toff  
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  
L
EAR= 1/2 LIA2R  
BVDSS  
Vds  
Id  
Vgs  
Vds  
+
Vgs  
Vdd  
I AR  
VDC  
Id  
Rg  
-
DUT  
Vgs  
Vgs  
Diode Recovery Test Circuit & Waveforms  
Qrr = - Idt  
Vds +  
Vds -  
Ig  
DUT  
Vgs  
trr  
L
Isd  
I F  
Isd  
Vgs  
dI/dt  
I RM  
+
Vdd  
VDC  
Vdd  
-
Vds  
6 / 6  
www.freescale.net.cn  

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