AO4406L [AOS]
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| 型号： | AO4406L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总6页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4406
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4406/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion. AO4406 and
AO4406L are electrically identical.
VDS (V) = 30V
ID = 11.5A (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 16.5mΩ (VGS = 4.5V)
RDS(ON) < 26mΩ (VGS = 2.5V)
-RoHS Compliant
-AO4406L is Halogen Free
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D
S
S
S
G
D
D
D
D
G
S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
Continuous Drain
Current AF
VGS
±12
11.5
9.6
V
A
TA=25°C
TA=70°C
ID
Pulsed Drain Current B
Avalanche Current B
Repetitive Avalanche Energy B L=0.3mH
IDM
IAV
EAV
80
A
25
mJ
94
TA=25°C
3
PD
W
°C
TA=70°C
Power Dissipation
2.1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
23
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient AF
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
48
65
RθJL
12
16
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=12A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
1.5
nA
V
VGS(th)
ID(ON)
0.8
60
1
A
11.5
16
14
19.2
16.5
26
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
VGS=2.5V, ID=8A
VDS=5V, ID=10A
IS=10A,VGS=0V
13.5
19.5
38
mΩ
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
25
0.83
1
V
Maximum Body-Diode Continuous Current
4.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1630
201
142
0.8
2300
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
200
1.8
VGS=0V, VDS=0V, f=1MHz
0.4
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
13.5
18
2.5
5.5
4
24
nC
nC
nC
ns
ns
ns
ns
VGS=4.5V, VDS=15V, ID=11.5A
6
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
5
7.5
50
10
24
15
tD(off)
tf
32
5
trr
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
18.7
12.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Rev9: May 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
30
10V
4.5V
VDS=5V
2.5V
3V
25
20
15
10
5
40
30
20
10
0
2V
125°C
25°C
VGS=1.5V
3
0
0
1
2
4
5
0
0.5
1
1.5
VGS(Volts)
Figure 2: Transfer Characteristics
2
2.5
3
VDS (Volts)
Fig 1: On-Region Characteristics
30
1.8
VGS=10V
ID=10A
25
20
15
10
5
1.6
1.4
1.2
1
VGS=2.5V
VGS=4.5V
VGS=4.5V
VGS=2.5V
VGS=10V
0
0.8
0
5
10
15
20
25
30
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
I
D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
VGS=0V
125°C
ID=10A
30
20
10
0
125°C
25°C
25°C
0.0
0.2
0.4
0.6
VSD (Volts)
0.8
1.0
1.2
0.00
2.00
4.00
6.00
8.00
10.00
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
2500
2250
2000
1750
1500
1250
1000
750
VDS=15V
ID=11.5A
Ciss
Coss
Crss
500
250
0
0
4
8
12
g (nC)
Figure 7: Gate-Charge Characteristics
16
20
24
0
5
10
15
VDS (Volts)
20
25
30
Q
Figure 8: Capacitance Characteristics
100.0
50
10µs
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
40
30
20
10
0
10.0
10ms
0.1s
1s
1.0
0.1
10s
TJ(Max)=150°C
TA=25°C
DC
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
0.1
1
10
100
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
V
DS (Volts)
Figure 9: Maximum Forward Biased Safe
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=65°C/W
1
PD
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
3
2
1
0
70
TA=25°C
60
L ID
50
tA
=
BV −VDD
40
30
20
10
10s
Steady-
State
0
0.00001
0.0001
0.001
25
50
75
100
CASE (°C)
Figure 13: Power De-rating (Note A)
125
150
Time in avalanche, tA (s)
T
Figure 12: Avalanche capability
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4406
Gate Charge Test Circuit &Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Vds
Ig
Charge
Resistive Switching TestCircuit& Waveforms
RL
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
t d(on)
t
r
t d(off)
t
f
t on
toff
Unclamped Inductive Switching (UIS) Test Circuit& Waveforms
L
2
EAR=1/2 LI
AR
BVDSS
Vds
Id
Vds
+
Vgs
Vdd
IAR
Vgs
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode RecoveryTestCircuit &Waveforms
Qrr =- Idt
Vds +
Vds -
Ig
DUT
Vgs
Isd
trr
L
IF
Isd
dI/dt
+
IRM
Vdd
Vgs
VDC
Vdd
-
Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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