AO4407A [FREESCALE]
30V P-Channel MOSFET; 30V P沟道MOSFET
| 型号： | AO4407A |
| 厂家： | 
Freescale |
| 描述： | 30V P-Channel MOSFET |
| 文件： | 总5页 (文件大小：456K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4407A
30V P-Channel MOSFET
General Description
The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
Features
VDS = -30V
ID = -12A
(VGS = -20V)
RDS(ON) < 11mꢀ (VGS = -20V)
RDS(ON) < 13mꢀ (VGS = -10V)
RDS(ON) < 17mꢀ (VGS = -6V)
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
-30
V
Gate-Source Voltage
Continuous Drain
Current A
Pulsed Drain Current B
Avalanche Current G
VGS
±25
-12
V
TA=25°C
TA=70°C
ID
-10
A
IDM
IAR
EAR
-60
-26
Repetitive avalanche energy L=0.3mH G
101
mJ
W
TA=25°C
3.1
Power Dissipation A
TA=70°C
PD
2.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
32
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
40
75
24
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady State
Steady State
60
RθJL
17
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AO4407A
30V P-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID = -250µA, VGS = 0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS = -30V, VGS = 0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ = 55°C
TJ=125°C
V
DS = 0V, VGS = ±25V
VDS = VGS ID = -250µA
GS = -10V, VDS = -5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VGS(th)
ID(ON)
-1.7
-60
-2.3
V
A
VGS = -20V, ID = -12A
8.5
11.5
10
11
15
13
17
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS = -10V, ID = -12A
VGS = -6V, ID = -10A
VDS = -5V, ID = -10A
IS = -1A,VGS = 0V
12.7
21
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
-0.7
-1
-3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
2060
370
295
2.4
2600
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3.6
39
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
30
4.6
10
11
9.4
24
12
30
22
nC
nC
nC
ns
ns
ns
ns
VGS=-10V, VDS=-15V, ID=-12A
VGS=-10V, VDS=-15V, RL=1.25Ω,
RGEN=3Ω
tD(off)
tf
IF=-12A, dI/dt=100A/µs
IF=-12A, dI/dt=100A/µs
trr
40
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev10: Nov 2010
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AO4407A
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
60
40
20
0
80
60
40
20
0
VDS= -5V
-10V
-6V
-5V
-4.5V
-4V
125°C
2.5
25°C
VGS= -3.5V
4
0
1
2
3
5
0
0.5
1
1.5
2
3
3.5
4
4.5
5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
20
15
10
5
1.8
1.6
1.4
1.2
1.0
0.8
VGS=-20V
ID=-12A
VGS=-6V
VGS=-10V
ID=-12A
VGS=-10V
VGS=-20V
VGS=-6V
ID=-10A
0
0
4
8
12
16
20
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
30
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
ID=-12A
25
20
15
10
5
125°C
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3
4
5
6
7
8
9
10
-VSD (Volts)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
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AO4407A
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
2500
2000
1500
1000
500
10
8
VDS=-15V
ID=-12A
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
25
30
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
1000
100
10
10µs
TJ(Max)=150°C
TA=25°C
100µs
1ms
1
10ms
RDS(ON) limited
100ms
0.1
0.01
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
1
0.1
0.01
PD
Ton
T
Single Pulse
0.001
0.001
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
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AO4407A
30V P-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
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