AO4407 [FREESCALE]

P-Channel 30-V (D-S) MOSFET Fast switching speed; P通道30 -V (D -S ) MOSFET的开关速度快
AO4407
型号: AO4407
厂家: Freescale    Freescale
描述:

P-Channel 30-V (D-S) MOSFET Fast switching speed
P通道30 -V (D -S ) MOSFET的开关速度快

晶体 开关 晶体管 光电二极管
文件: 总5页 (文件大小:560K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Freescale  
AO4407/MC4407A  
P-Channel 30-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) m()  
ID (A)  
-11.5  
-9.3  
13 @ VGS = -10V  
-30  
19 @ VGS = -4.5V  
Low rDS(on) provides higher efficiency and  
extends battery life  
Low thermal impedance copper leadframe  
SOIC-8 saves board space  
Fast switching speed  
High performance trench technology  
1
2
8
7
6
5
3
4
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
-30  
±25  
V
TA=25oC  
TA=70oC  
-11.5  
-9.3  
±50  
-2.1  
3.1  
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
A
TA=25oC  
TA=70oC  
PD  
W
2.3  
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RθJC  
RθJA  
Maximum  
Units  
o
C/W  
oC/W  
Maximum Junction-to-Casea  
t <= 5 sec  
25  
Maximum Junction-to-Ambienta  
t <= 5 sec  
50  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
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1
Freescale  
AO4407/MC4407A  
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)  
Limits  
Unit  
Parameter  
Symbol  
Test Conditions  
Min Typ Max  
Static  
V(BR)DSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = -250 uA  
VDS = VGS, ID = -250 uA  
VDS = 0 V, VGS = ±25 V  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
Gate-Body Leakage  
-30  
-1  
V
±100 nA  
V
DS = -24 V, VGS = 0 V  
-1  
IDSS  
Zero Gate Voltage Drain Current  
On-State Drain CurrentA  
uA  
-5  
VDS = -24 V, VGS = 0 V, TJ = 55oC  
ID(on)  
VDS = -5 V, VGS = -10 V  
VGS = -10 V, ID = -11.5 A  
VGS = -4.5 V, ID = -9.3 A  
VDS = -15 V, ID = -11.5 A  
IS = 2.5 A, VGS = 0 V  
-50  
A
13  
19.0  
Drain-Source On-ResistanceA  
Forward TranconductanceA  
Diode Forward Voltage  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
rDS(on)  
m  
gfs  
VSD  
29  
-0.8  
S
V
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
td(on)  
tr  
td(off)  
tf  
25  
11  
17  
VDS = -15 V, VGS = -5 V,  
ID = -11.5 A  
nC  
pF  
2300  
Input Capacitance  
VDS=-15V, VGS=0V, f=1MHz  
600  
Output Capacitance  
300  
Reverse Transfer Capacitance  
Turn-On Delay Time  
15  
13  
100  
54  
Rise Time  
Turn-Off Delay Time  
Fall-Time  
D
VDD = -15 V, RL = 6 ,  
I
nS  
= -1 A, VGEN = -10 V  
Notes  
a.  
b.  
Pulse test: PW <= 300us duty cycle <= 2%.  
Guaranteed by design, not subject to production testing.  
reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation  
FREESCALE  
t of the application or  
or guarantee regarding the suitability of its products for any particular purpose, nor doesfreescale assume any liability arising ou  
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary in different applications and  
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by  
under its patent rights nor the  
are not designed,  
rights of others. freescale products  
customer’s technical experts. freescaleL does not convey any license  
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or  
sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or deathfremescaayleoacndcuitsr.  
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold  
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney  
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.  
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2
Freescale  
AO4407/MC4407A  
Typical Electrical Characteristics (P-Channel)  
-50  
-40  
-30  
-20  
-10  
0
4V thru 10v  
3.5 V  
3 V  
2.5 V  
0
-1  
-2  
-3  
VDS - Drain to So urce Vo ltage (V)  
Figure 1. On-Region Characteristics  
Figure 2. On-Resistance Variation with  
Drain Current and Gate Voltage  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.05  
0.04  
0.03  
0.02  
0.01  
0
V
D
=10 V  
GS  
I
=11. 5 A  
D
I =11.5a  
0
2
4
6
8
10  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VGS - Gat e t o Sour ce Vol t age ( V)  
TJ - Junction Temperature (ºC)  
Figure 3. On-Resistance Variation with Temperature  
Figure 4. On-Resistance with Gate to Source Voltage  
100  
-50  
25C  
-40  
125C  
-55C  
10  
-30  
-20  
-10  
0
TJ = 150°C  
TJ = 25°C  
1
0
-1  
-2  
-3  
-4  
-5  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
VGS - Gate to Source Voltage (V)  
VSD - Source to Drain Current (V)  
Figure 5. Transfer Characteristics  
Figure 6. Body Diode Forward Voltage Variation  
with Source Current and Temperature  
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3
Freescale  
AO4407/MC4407A  
Typical Electrical Characteristics (P-Channel)  
4000  
3000  
2000  
1000  
0
10  
8
VDS = 10V  
CIS
S  
6
4
CRSS COSS  
2
0
0
10  
QGS, Total Gate Charge (nC)  
Figure 7. Gate Charge Characteristics  
20  
30  
40  
50  
0
-5  
-10  
-15  
-20  
VDS (V)  
Figure 8. Capacitance Characteristics  
50  
0.8  
0.6  
0.4  
0.2  
0
45  
40  
35  
30  
25  
20  
15  
10  
5
-0.2  
-0.4  
-50 -25  
0
25  
50  
75 100 125 150  
0
0.01  
TJ - Juncation Temperature (ºC)  
0.1  
1
10  
Pulse Time (S)  
Figure 10. Single Pulse Maximum Power Dissipation  
100 1000  
Figure 9. Maximum Safe Operating Area  
Normalized Thermal Transient Junction to Ambient  
1
0.5  
0.2  
P
DM  
0.1  
t1  
t2  
0.1  
0.05  
0.02  
1. Duty Cycal D = t1/t2  
θ
J A  
2. Per Unit Base R =70C/W  
θ
J M  
A
DM  
3. T - T = P Z jc  
4. Sureface Mounted  
Single Pulse  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Square Wave Pulse Duration (S)  
Figure 11. Transient Thermal Response Curve  
www.freescale.net.cn  
4
Freescale  
AO4407/MC4407A  
Package Information  
SO-8: 8LEAD  
H x 45°  
www.freescale.net.cn  
5

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