FDD3N50NZTM [FAIRCHILD]
N-Channel MOSFET 500V, 2.5A, 2.5ï; N沟道MOSFET 500V ， 2.5A ，虎2.5i ????
| 型号： | FDD3N50NZTM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel MOSFET 500V, 2.5A, 2.5ï |
| 文件： | 总8页 (文件大小：550K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2011
TM
UniFET-II
FDD3N50NZ
N-Channel MOSFET
500V, 2.5A, 2.5
Features
Description
•
•
•
•
•
•
R
= 2.1 ( Typ.)@ V = 10V, I = 1.25A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
DS(on)
GS
D
Low Gate Charge ( Typ. 6.2nC)
Low C ( Typ. 2.5pF)
rss
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
•
•
ESD Imoroved Capability
RoHS Compliant
D
G
S
D-PAK
o
MOSFET Maximum Ratings T = 25 C unless otherwise noted*
C
Symbol
Parameter
FDD3N50NZ
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
500
V
V
DSS
GSS
±25
o
-Continuous (T = 25 C)
2.5
C
I
I
Drain Current
A
D
o
-Continuous (T = 100 C)
1.5
C
Drain Current
- Pulsed
ꢀꢀꢀ (Note 1)
ꢀꢀ(Note 2)
ꢀ (Note 1)
ꢀ (Note 1)
ꢀ (Note 3)
10
A
mJ
A
DM
E
Single Pulsed Avalanche Energy
Avalanche Current
114
AS
I
2.5
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
4
mJ
V/ns
W
AR
dv/dt
10
40
o
(T = 25 C)
C
P
Power Dissipation
D
o
o
- Derate above 25 C
0.3
W/ C
o
T , T
Operating and Storage Temperature Range
-55 to +150
C
J
STG
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
T
300
C
L
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Units
Ratings
3.1
R
R
JC
o
C/W
90
JA
©2011 Fairchild Semiconductor Corporation
FDD3N50NZ Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD3N50NZ
FDD3N50NZTM
D-PAK
380mm
16mm
2500
o
Electrical Characteristics T = 25 C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
o
BV
Drain to Source Breakdown Voltage
I
I
= 250A, V = 0V, T = 25 C
500
-
-
-
-
V
DSS
D
D
GS
C
BV
T
Breakdown Voltage Temperature
Coefficient
o
o
DSS
= 250A, Referenced to 25 C
0.5
V/ C
J
V
V
V
= 500V, V = 0V
-
-
-
-
1
DS
DS
GS
GS
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
A
DSS
GSS
o
= 400V, V = 0V,T = 125 C
-
10
GS
C
I
= ±25V, V = 0V
-ꢀ
±10
DS
On Characteristics
V
Gate Threshold Voltage
V
V
V
= V , I = 250A
3.0
-ꢀ
-
-
5.0
2.5
-
V
S
GS(th)
GS
GS
DS
DS
D
R
g
Static Drain to Source On Resistance
Forward Transconductance
= 10V, I = 1.25A
2.1
1.9
DS(on)
D
= 20V, I = 1.25A
(Note 4)
D
FS
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
-
-
210
30
280
45
5
pF
pF
pF
nC
nC
iss
V
= 25V, V = 0V
GS
DS
Output Capacitance
oss
rss
f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
2.5
6.2
1.4
Q
Q
8
g(tot)
gs
V
V
= 400V I = 2.5A
DS
GS
D
-
= 10V
Q
Gate to Drain “Miller” Charge
-
3.1
-
nC
gd
(Note 4, 5)
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
10
15
26
17
30
40
60
45
ns
ns
ns
ns
d(on)
V
V
= 250V, I = 2.5A
DD
GS
D
r
= 10V, R
= 25
GEN
d(off)
f
(Note 4, 5)
Drain-Source Diode Characteristics
I
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
2.5
10
1.4
-
A
A
S
SM
V
t
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
= 0V, I = 2.5A
-
V
SD
GS
SD
190
0.52
ns
C
V
= 0V, I = 2.5A
rr
GS
SD
dI /dt = 100A/s
(Note 4)
Q
Reverse Recovery Charge
-
F
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 36.6mH, I = 2.5A, V = 50V, R = 25, Starting T = 25C
AS
DD
G
J
3. I 2.5A, di/dt 200A/s, V BV
, Starting T = 25C
SD
DD
DSS
J
4. Pulse Test: Pulse width 300s, Dual Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FDD3N50NZ Rev. C0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.fairchildsemi.com
FDD3N50NZ Rev. C0
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
Figure 10. Maximum Drain Current
Figure 11. Transient Thermal Response Curve
PDM
t1
t2
www.fairchildsemi.com
FDD3N50NZ Rev. C0
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FDD3N50NZ Rev. C0
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
FDD3N50NZ Rev. C0
6
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
www.fairchildsemi.com
FDD3N50NZ Rev. C0
7
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
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Preliminary
First Production
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make changes at any time without notice to improve the design.
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Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I55
FDD3N50NZ Rev. C0
8
www.fairchildsemi.com
相关型号：
FDD4243_F085
Power Field-Effect Transistor, 14A I(D), 40V, 0.044ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
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