EFA024A [EXCELICS]
Low Distortion GaAs Power FET; 低失真功率的GaAs FET型号: | EFA024A |
厂家: | EXCELICS SEMICONDUCTOR, INC. |
描述: | Low Distortion GaAs Power FET |
文件: | 总2页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Excelics
EFA024A
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
·
·
·
+18.0dBm TYPICAL OUTPUT POWER
11.0dB TYPICAL POWER GAIN AT 12GHz
TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED
GAIN AT 12GHz
G
G
·
·
·
0.3 X 240 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
S
S
S
D
D
·
Idss SORTED IN 5mA PER BIN RANGE
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
18
18
11
9
MAX
UNIT
Output Power at 1dB Compression
f=12GHz
f=18GHz
f=12GHz
f=18GHz
16
dBm
P1dB
Vds=6V, Ids=50% Idss
Gain at 1dB Compression
Vds=6V, Ids=50% Idss
9
dB
%
G1dB
PAE
Power Added efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
30
1.6
10
Noise Figure Vds=3V,Ids=15mA
Associated Gain Vds=3V,Ids=15mA
f=12GHz
f=12GHz
dB
dB
mA
mS
V
NF
GA
Saturated Drain Current Vds=3V, Vgs=0V
35
30
60
85
Idss
Gm
Transconductance
Pinch-off Voltage
Vds=3V, Vgs=0V
40
Vds=3V, Ids=1.0mA
-2
-3.5
Vp
Drain Breakdown Voltage Igd=100uA
Source Breakdown Voltage Igs=100uA
Thermal Resistance (Au-Sn Eutectic Attach)
-8
-6
-12
-11
135
V
BVgd
BVgs
Rth
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
10V
CONTINUOUS2
6V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Vds
Vgs
Ids
-8V
-4V
Idss
Idss
Forward Gate Current
Input Power
6mA
1mA
Igsf
Pin
Tch
Tstg
Pt
19dBm
175oC
-65/175oC
1W
@ 3dB Compression
150oC
-65/150oC
Channel Temperature
Storage Temperature
Total Power Dissipation
830mW
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFA024A
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
S-PARAMETERS
3V, 15mA
6V,1/2Idss
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
FREQ
--- S11 ---
--- S21 ---
--- S12 ---
--- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.998 -11.6 3.455 169.4 0.019 80.9 0.715
-7.2
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
0.990 -12.5 3.579 168.3 0.012 81.1 0.807
-5.3
0.984 -23.2 3.398 160.1 0.036 74.2 0.702 -13.8
0.972 -34.2 3.356 151.3 0.054 67.8 0.687 -19.6
0.950 -44.8 3.231 142.7 0.068 61.5 0.686 -27.8
0.927 -53.9 3.002 133.9 0.079 55.3 0.677 -32.9
0.908 -65.5 2.966 125.3 0.092 49.0 0.637 -36.8
0.878 -75.5 2.918 117.6 0.105 43.3 0.609 -44.2
0.859 -81.6 2.669 110.1 0.108 37.7 0.606 -51.2
0.853 -90.4 2.498 102.9 0.114 32.3 0.582 -53.6
0.977 -25.3 3.516 158.5 0.025 74.8 0.801 -10.6
0.961 -37.5 3.459 149.2 0.036 68.2 0.788 -14.8
0.941 -49.2 3.324 139.4 0.045 61.1 0.783 -21.5
0.920 -59.3 3.055 130.4 0.051 55.2 0.778 -26.2
0.902 -72.1 2.990 121.3 0.059 49.9 0.748 -27.6
0.878 -82.5 2.943 113.3 0.068 45.2 0.720 -32.5
0.865 -88.2 2.674 105.6 0.069 40.5 0.717 -39.6
0.859 -96.2 2.473 98.4 0.071 35.4 0.707 -42.1
10.0 0.835 -99.4 2.415 96.2 0.120 27.5 0.544 -57.1
11.0 0.827 -106.4 2.294 89.5 0.123 23.1 0.527 -62.9
12.0 0.815 -114.4 2.186 83.0 0.127 18.1 0.500 -67.0
13.0 0.799 -120.5 2.100 76.9 0.131 14.2 0.484 -75.5
14.0 0.796 -123.4 1.901 72.1 0.127 11.5 0.515 -79.5
10.0 0.843 -104.7 2.388 91.7 0.074 30.6 0.678 -45.2
11.0 0.837 -110.5 2.264 85.0 0.075 27.8 0.670 -50.8
12.0 0.824 -117.6 2.159 78.4 0.078 24.3 0.652 -54.5
13.0 0.808 -122.8 2.092 72.1 0.080 20.6 0.643 -62.9
14.0 0.803 -125.6 1.881 66.3 0.076 17.6 0.672 -69.2
15.0 0.814 -137.5 1.782 60.2 0.077 15.0 0.675 -64.7
16.0 0.803 -149.5 1.897 52.5 0.085 11.3 0.616 -69.2
15.0 0.816 -134.9 1.817 65.9 0.127
16.0 0.802 -146.3 1.910 58.4 0.142
17.0 0.752 -139.3 1.791 54.4 0.142
18.0 0.773 -145.1 1.562 50.2 0.130
19.0 0.776 -163.9 1.620 43.2 0.141
7.0
2.0
0.492 -74.4
0.416 -83.9
0.3
0.477 -105.8 17.0 0.766 -143.3 1.783 46.6 0.086
8.7
8.4
0.651 -89.0
0.713 -85.2
0.672 -72.2
0.630 -95.3
0.689 -94.8
0.669 -95.5
0.634 -106.0
0.671 -108.4
0.633 -115.5
0.668 -133.3
-1.6
-6.2
0.540 -98.6
0.462 -87.8
18.0 0.784 -149.9 1.506 42.6 0.077
19.0 0.789 -168.5 1.545 36.7 0.084
6.1
20.0 0.729 -171.0 1.607 33.7 0.148 -12.9 0.452 -118.6 20.0 0.760 -175.1 1.583 25.9 0.091
21.0 0.715 -168.2 1.559 32.7 0.150 -12.3 0.529 -113.0 21.0 0.753 -173.0 1.505 24.3 0.092
22.0 0.733 -167.4 1.470 30.0 0.147 -12.6 0.487 -113.4 22.0 0.767 -170.3 1.423 22.6 0.092
23.0 0.737 179.0 1.398 20.7 0.148 -18.8 0.459 -125.1 23.0 0.772 177.9 1.371 12.9 0.093
-0.6
1.2
3.2
-3.0
-3.1
-2.8
-8.8
24.0 0.736 175.2 1.353 17.6 0.149 -19.7 0.500 -123.0 24.0 0.768 174.8 1.329
25.0 0.751 174.5 1.306 13.3 0.148 -20.7 0.431 -130.3 25.0 0.776 175.3 1.303
8.9
4.5
0.096
0.098
0.097
26.0 0.746 166.7 1.241
5.3
0.145 -26.7 0.482 -148.0 26.0 0.769 167.3 1.234
-6.0
Note:
The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 10 mils each.
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