EFA024A [EXCELICS]

Low Distortion GaAs Power FET; 低失真功率的GaAs FET
EFA024A
型号: EFA024A
厂家: EXCELICS SEMICONDUCTOR, INC.    EXCELICS SEMICONDUCTOR, INC.
描述:

Low Distortion GaAs Power FET
低失真功率的GaAs FET

文件: 总2页 (文件大小:49K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Excelics  
EFA024A  
PRELIMINARY DATA SHEET  
Low Distortion GaAs Power FET  
·
·
·
+18.0dBm TYPICAL OUTPUT POWER  
11.0dB TYPICAL POWER GAIN AT 12GHz  
TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED  
GAIN AT 12GHz  
G
G
·
·
·
0.3 X 240 MICRON RECESSED “MUSHROOM” GATE  
Si3N4 PASSIVATION  
ADVANCED EPITAXIAL DOPING PROFILE  
PROVIDES HIGH POWER EFFICIENCY,  
LINEARITY AND RELIABILITY  
S
S
S
D
D
·
Idss SORTED IN 5mA PER BIN RANGE  
Chip Thickness: 75 ± 13 microns  
All Dimensions In Microns  
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)  
SYMBOLS  
PARAMETERS/TEST CONDITIONS  
MIN  
TYP  
18  
18  
11  
9
MAX  
UNIT  
Output Power at 1dB Compression  
f=12GHz  
f=18GHz  
f=12GHz  
f=18GHz  
16  
dBm  
P1dB  
Vds=6V, Ids=50% Idss  
Gain at 1dB Compression  
Vds=6V, Ids=50% Idss  
9
dB  
%
G1dB  
PAE  
Power Added efficiency at 1dB Compression  
Vds=6V, Ids=50% Idss  
f=12GHz  
30  
1.6  
10  
Noise Figure Vds=3V,Ids=15mA  
Associated Gain Vds=3V,Ids=15mA  
f=12GHz  
f=12GHz  
dB  
dB  
mA  
mS  
V
NF  
GA  
Saturated Drain Current Vds=3V, Vgs=0V  
35  
30  
60  
85  
Idss  
Gm  
Transconductance  
Pinch-off Voltage  
Vds=3V, Vgs=0V  
40  
Vds=3V, Ids=1.0mA  
-2  
-3.5  
Vp  
Drain Breakdown Voltage Igd=100uA  
Source Breakdown Voltage Igs=100uA  
Thermal Resistance (Au-Sn Eutectic Attach)  
-8  
-6  
-12  
-11  
135  
V
BVgd  
BVgs  
Rth  
V
oC/W  
MAXIMUM RATINGS AT 25OC  
SYMBOLS  
PARAMETERS  
ABSOLUTE1  
10V  
CONTINUOUS2  
6V  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
Vds  
Vgs  
Ids  
-8V  
-4V  
Idss  
Idss  
Forward Gate Current  
Input Power  
6mA  
1mA  
Igsf  
Pin  
Tch  
Tstg  
Pt  
19dBm  
175oC  
-65/175oC  
1W  
@ 3dB Compression  
150oC  
-65/150oC  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
830mW  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054  
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com  
EFA024A  
PRELIMINARY DATA SHEET  
Low Distortion GaAs Power FET  
S-PARAMETERS  
S-PARAMETERS  
3V, 15mA  
6V,1/2Idss  
FREQ  
--- S11 ---  
--- S21 ---  
--- S12 ---  
--- S22 ---  
FREQ  
--- S11 ---  
--- S21 ---  
--- S12 ---  
--- S22 ---  
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG (GHz) MAG ANG MAG ANG MAG ANG MAG ANG  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
0.998 -11.6 3.455 169.4 0.019 80.9 0.715  
-7.2  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
0.990 -12.5 3.579 168.3 0.012 81.1 0.807  
-5.3  
0.984 -23.2 3.398 160.1 0.036 74.2 0.702 -13.8  
0.972 -34.2 3.356 151.3 0.054 67.8 0.687 -19.6  
0.950 -44.8 3.231 142.7 0.068 61.5 0.686 -27.8  
0.927 -53.9 3.002 133.9 0.079 55.3 0.677 -32.9  
0.908 -65.5 2.966 125.3 0.092 49.0 0.637 -36.8  
0.878 -75.5 2.918 117.6 0.105 43.3 0.609 -44.2  
0.859 -81.6 2.669 110.1 0.108 37.7 0.606 -51.2  
0.853 -90.4 2.498 102.9 0.114 32.3 0.582 -53.6  
0.977 -25.3 3.516 158.5 0.025 74.8 0.801 -10.6  
0.961 -37.5 3.459 149.2 0.036 68.2 0.788 -14.8  
0.941 -49.2 3.324 139.4 0.045 61.1 0.783 -21.5  
0.920 -59.3 3.055 130.4 0.051 55.2 0.778 -26.2  
0.902 -72.1 2.990 121.3 0.059 49.9 0.748 -27.6  
0.878 -82.5 2.943 113.3 0.068 45.2 0.720 -32.5  
0.865 -88.2 2.674 105.6 0.069 40.5 0.717 -39.6  
0.859 -96.2 2.473 98.4 0.071 35.4 0.707 -42.1  
10.0 0.835 -99.4 2.415 96.2 0.120 27.5 0.544 -57.1  
11.0 0.827 -106.4 2.294 89.5 0.123 23.1 0.527 -62.9  
12.0 0.815 -114.4 2.186 83.0 0.127 18.1 0.500 -67.0  
13.0 0.799 -120.5 2.100 76.9 0.131 14.2 0.484 -75.5  
14.0 0.796 -123.4 1.901 72.1 0.127 11.5 0.515 -79.5  
10.0 0.843 -104.7 2.388 91.7 0.074 30.6 0.678 -45.2  
11.0 0.837 -110.5 2.264 85.0 0.075 27.8 0.670 -50.8  
12.0 0.824 -117.6 2.159 78.4 0.078 24.3 0.652 -54.5  
13.0 0.808 -122.8 2.092 72.1 0.080 20.6 0.643 -62.9  
14.0 0.803 -125.6 1.881 66.3 0.076 17.6 0.672 -69.2  
15.0 0.814 -137.5 1.782 60.2 0.077 15.0 0.675 -64.7  
16.0 0.803 -149.5 1.897 52.5 0.085 11.3 0.616 -69.2  
15.0 0.816 -134.9 1.817 65.9 0.127  
16.0 0.802 -146.3 1.910 58.4 0.142  
17.0 0.752 -139.3 1.791 54.4 0.142  
18.0 0.773 -145.1 1.562 50.2 0.130  
19.0 0.776 -163.9 1.620 43.2 0.141  
7.0  
2.0  
0.492 -74.4  
0.416 -83.9  
0.3  
0.477 -105.8 17.0 0.766 -143.3 1.783 46.6 0.086  
8.7  
8.4  
0.651 -89.0  
0.713 -85.2  
0.672 -72.2  
0.630 -95.3  
0.689 -94.8  
0.669 -95.5  
0.634 -106.0  
0.671 -108.4  
0.633 -115.5  
0.668 -133.3  
-1.6  
-6.2  
0.540 -98.6  
0.462 -87.8  
18.0 0.784 -149.9 1.506 42.6 0.077  
19.0 0.789 -168.5 1.545 36.7 0.084  
6.1  
20.0 0.729 -171.0 1.607 33.7 0.148 -12.9 0.452 -118.6 20.0 0.760 -175.1 1.583 25.9 0.091  
21.0 0.715 -168.2 1.559 32.7 0.150 -12.3 0.529 -113.0 21.0 0.753 -173.0 1.505 24.3 0.092  
22.0 0.733 -167.4 1.470 30.0 0.147 -12.6 0.487 -113.4 22.0 0.767 -170.3 1.423 22.6 0.092  
23.0 0.737 179.0 1.398 20.7 0.148 -18.8 0.459 -125.1 23.0 0.772 177.9 1.371 12.9 0.093  
-0.6  
1.2  
3.2  
-3.0  
-3.1  
-2.8  
-8.8  
24.0 0.736 175.2 1.353 17.6 0.149 -19.7 0.500 -123.0 24.0 0.768 174.8 1.329  
25.0 0.751 174.5 1.306 13.3 0.148 -20.7 0.431 -130.3 25.0 0.776 175.3 1.303  
8.9  
4.5  
0.096  
0.098  
0.097  
26.0 0.746 166.7 1.241  
5.3  
0.145 -26.7 0.482 -148.0 26.0 0.769 167.3 1.234  
-6.0  
Note:  
The data included 0.7 mils diameter Au bonding wires:  
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 10 mils each.  

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