DMN3042L-7 [DIODES]
Low On-Resistance;
| 型号： | DMN3042L-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Low On-Resistance |
| 文件： | 总6页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3042L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
Low On-Resistance
V(BR)DSS
RDS(ON) max
ID max
5.8A
Low Gate Threshold Voltage
Low Input Capacitance
26.5mΩ @ VGS = 10V
32mΩ @ VGS = 4.5V
Fast Switching Speed
30V
5.0A
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
•
•
•
•
•
•
Battery Charging
Power Management Functions
DC-DC Converters
•
•
Portable Power Adaptors
SOT23
D
D
G
S
G
S
Internal Schematic
Top View
Top View
Ordering Information (Note 4)
Part Number
DMN3042L-7
DMN3042L-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT23
4L = Product Type Marking Code
YM = Date Code Marking
Y or Y̅ = Year (ex: B = 2014)
M = Month (ex: 9 = September)
4L
Date Code Key
Year
Code
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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January 2015
© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
DMN3042L
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
12
VGSS
Steady
Continuous Drain Current (Note 6) VGS = 10V
State
TA = +25°C
TA = +70°C
5.8
4.0
A
ID
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
1.5
30
A
A
IS
IDM
Thermal Characteristics
Characteristic
Symbol
Value
0.72
171
1.4
Unit
W
Power Dissipation (Note 5)
PD
RθJA
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
Steady State
Steady State
°C/W
W
PD
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
93
°C/W
°C
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
1
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS 12V, VDS = 0V
µA
nA
100
IGSS
=
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.6
1.4
26.5
32
V
mΩ
V
21
23
29
0.7
VGS(th)
RDS (ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID = 4.0A
VGS = 0V, IS = 1A
Static Drain-Source On-Resistance
48
Diode Forward Voltage
1.2
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
570
63
860
95
80
4.5
20
8
Ciss
Coss
Crss
RG
Qg
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
53
3.2
13.3
6.1
1.0
1.6
1.5
3.3
13.9
4.9
7.8
1.9
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Qg
nC
nS
VDS = 15V, ID = 6.9A
1.5
2.5
2.4
5
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDD = 15V, RG = 3Ω,
ID = 6.9A
Turn-Off Delay Time
22
7
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12
3
nS
nC
trr
IS = 5A, dI/dt = 100A/µs
IS = 5A, dI/dt = 100A/µs
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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January 2015
© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
DMN3042L
30
25
20
18
V
= 2.5V
GS
V
= 5.0V
DS
V
= 3.0V
GS
16
14
12
10
8
V
= 4.0V
GS
20
15
10
V
V
= 4.5V
GS
V
= 2.0V
GS
= 10.0V
GS
T
= 150°C
A
T
= 125°C
A
6
T
= 85°C
A
4
5
0
T
= 25°C
A
2
V
= 1.5V
GS
T
A
= -55°C
0
0
0
0.5
1
1.5
2
2.5
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.028
0.026
0.024
0.022
0.2
I
= 5.8A
D
0.16
V
= 4.5V
GS
0.12
0.08
V
= 10V
GS
0.02
0.04
0
I
= 5.0A
D
0.018
0
5
10
15
20
25
30
0
2
4
6
8
10
12
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
0.04
0.035
0.03
1.8
1.6
1.4
V
= 10V
GS
V
= 4.5V
= 5.0A
GS
T
T
= 150°C
= 125°C
A
A
I
D
V
= 10V
GS
I
= 5.8A
D
V
= 2.5V
GS
I
= 4.0A
T
= 85°C
= 25°C
D
A
0.025
0.02
1.2
1
T
A
A
0.015
0.01
0.8
0.6
T
= -55°C
0
2
4
6
8
10 12 14 16 18 20
-50 -25
0
25
50
75 100 125 150
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
DMN3042L
0.05
0.04
1.2
1.1
1
V
= 2.5V
= 10A
GS
I
= 1mA
D
I
D
0.9
0.8
0.7
I
= 250µA
D
0.03
V
I
= 10V
GS
= 5.8A
D
0.6
V
= 4.5V
GS
0.02
0.01
0.5
0.4
0.3
I
= 5.0A
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
20
16
12
8
10000
T
= 150°C
f = 1MHz
A
T
= 125°C
A
1000
C
iss
T
= 85°C
A
100
C
oss
C
rss
4
T
= 25°C
A
T
= -55°C
A
0
0
10
0
0.3
0.6
0.9
1.2
1.5
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
100
10
1
R
Limited
DS(on)
V
= 15V
DS
8
6
4
2
0
I
= 6.9A
D
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
0.1 T
= 150°C
J(max)
P
= 10ms
W
T
= 25°C
A
V
= 10V
Single Pulse
P
= 1ms
GS
W
P
= 100µs
W
DUT on 1 * MRP Board
0.01
0.1
0
2
4
6
8
10
12
14
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
DMN3042L
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
thja(t) = r(t) * R
thja
Rthja = 168°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
0.1
1
10 100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT23
Min Max
Dim
A
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.51
1.40
2.50
B
C
D
1.03 0.915
0.60 0.535
F
G
H
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
0.890 1.00 0.975
0.903 1.10 1.025
K1
L
0.45
0.25
0.61
0.55
0.55
0.40
L1
M
a
0.085 0.150 0.110
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Dimensions Value (in mm)
Y
Z
X
Y
C
E
2.9
0.8
Z
0.9
2.0
C
1.35
E
X
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© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
DMN3042L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMN3042L
Document number: DS37539 Rev. 2- 2
相关型号：
DMN3050S-7
Power Field-Effect Transistor, 5.2A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
DIODES
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