DMN3052L [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | DMN3052L |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总6页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3052L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
•
Low On-Resistance:
•
•
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
RDS(ON) < 32mΩ @ VGS = 10V
RDS(ON) < 42mΩ @ VGS = 4.5V
RDS(ON) < 64mΩ @ VGS = 2.5V
•
•
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
•
SOT-23
Drain
D
Gate
S
G
Source
TOP VIEW
TOP VIEW
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
V
VGSS
±12
Drain Current (Note 1)
TA = 25°C
TA = 70°C
Pulsed
5.4
4.6
A
ID
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
19
2.0
A
A
IDM
IS
Thermal Characteristics
Characteristic
Symbol
Value
1.4
Unit
W
Total Power Dissipation (Note 1)
PD
90
°C/W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Rθ
JA
-55 to +150
°C
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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July 2009
© Diodes Incorporated
DMN3052L
Document number: DS31406 Rev. 4 - 2
DMN3052L
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
30
V
BVDSS
IDSS
⎯
⎯
⎯
1
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
⎯
μA
±80
±800
Gate-Body Leakage
nA
IGSS
⎯
⎯
V
GS = ±19V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
0.62
0.9
1.2
V
VGS(th)
VDS = VGS, ID = 250μA
26
33
52
78
32
42
64
V
V
GS = 10V, ID = 5.8A
GS = 4.5V, ID = 5.0A
⎯
⎯
⎯
⎯
Static Drain-Source On-Resistance
RDS (ON)
mΩ
VGS = 2.5V, ID = 3.8A
GS = 2.0V, ID = 2.0A
100
V
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
8
S
V
|Yfs|
VSD
⎯
⎯
⎯
1.2
VDS = 5V, ID = 3.1A
VGS = 0V, IS = 2.0A
0.75
555
109
82
pF
pF
pF
Ciss
Coss
Crss
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 5V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Total Gate Charge
6.3
1.3
1.7
VGS = 4.5V, VDS = 15V,
ID = 5.8A
Gate-Source Charge
nC
Qgs
Qgd
Gate-Drain Charge
Notes:
4. Short duration pulse test used to minimize self-heating effect.
20
16
20
T
= -55°C
A
V
= 10V
V
= 5V
DS
GS
T
= 25°C
A
Pulsed
V
= 4.0V
GS
T
= 85°C
V
= 3.0V
A
GS
16
12
8
T
= 125°C
A
V
= 2.5V
GS
T
= 150°C
A
12
8
4
0
V
V
= 2.0V
GS
4
0
= 1.5V
GS
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5 5
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
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© Diodes Incorporated
DMN3052L
Document number: DS31406 Rev. 4 - 2
DMN3052L
0.08
0.06
1
V
= 4.5V
GS
T
T
= 150°C
= 125°C
A
A
T
= 85°C
= 25°C
A
A
0.1
0.04
T
V
= 2.5V
GS
V
= 4.5V
GS
T
= -55°C
A
0.02
0
V
= 10V
GS
0.01
0
4
8
12
ID, DRAIN-SOURCE CURRENT (A)
Fig 3 On-Resistance vs. Drain Current & Gate Voltage
16
20
0
4
8
12
16
20
ID, DRAIN-SOURCE CURRENT (A)
Fig. 4 On-Resistance vs. Drain Current & Temperature
1.6
1.6
1.4
V
= 10V
GS
I
= 10A
D
1.4
1.2
1.0
0.8
V
= 4.5V
= 5A
GS
I = 1mA
D
1.2
1.0
I
D
I
= 250µA
D
0.6
0.4
0.8
0.6
0.2
0
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
Fig. 5 Static Drain-Source On-Resistance
vs. Ambient Temperature
1,000
20
T
= 25°C
A
f = 1MHz
C
iss
16
12
100
8
4
0
C
oss
C
rss
10
0
5
10
15
20
25
0
0.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
0.4
0.6
0.8
1
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Typical Total Capacitance
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© Diodes Incorporated
DMN3052L
Document number: DS31406 Rev. 4 - 2
DMN3052L
10
8
6
4
I
= 5.8A
D
2
0
0
2
4
6
8
10
12
14
QG, TOTAL GATE CHARGE (nC)
Fig. 9 Total Gate Charge
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θ
JA
R
= 169°C/W
θ
JA
P(pk)
T
0.01
D = 0.01
t
1
t
2
D = 0.005
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (S)
Fig. 10 Transient Thermal Resistance
Ordering Information (Note 5)
Part Number
Case
Packaging
DMN3052L-7
SOT-23
3000/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MN5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
MN5
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMN3052L
Document number: DS31406 Rev. 4 - 2
DMN3052L
Package Outline Dimensions
SOT-23
A
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
G
0.013 0.10
0.903 1.10
M
K
J
K1
K1
L
M
-
-
D
0.45
0.61
F
L
0.085 0.18
0° 8°
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
X
E
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July 2009
© Diodes Incorporated
DMN3052L
Document number: DS31406 Rev. 4 - 2
DMN3052L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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© Diodes Incorporated
DMN3052L
Document number: DS31406 Rev. 4 - 2
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