DMN3051LDM [DIODES]

N-CHANNEL ENHANCEMENT MODE MOSFET; N沟道增强型MOSFET
DMN3051LDM
型号: DMN3051LDM
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

N-CHANNEL ENHANCEMENT MODE MOSFET
N沟道增强型MOSFET

文件: 总5页 (文件大小:110K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DMN3051LDM  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Low On-Resistance  
Case: SOT-26  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram  
Terminals: Finish Matte Tin annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.015 grams (approximate)  
38 mΩ @ VGS = 10V  
64 mΩ @ VGS = 4.5V  
Low Input Capacitance  
Fast Switching Speed  
Lead Free By Design/RoHS Compliant (Note 2)  
"Green" Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
SOT-26  
D
D
D
S
D
G
TOP VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
Value  
30  
Units  
V
V
A
A
VDSS  
VGSS  
ID  
Gate-Source Voltage  
±20  
4.0  
Drain Current (Note 1)  
Pulsed Drain Current (Note 1)  
16  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Value  
900  
Units  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
139  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.  
2. No purposefully added lead.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 5  
www.diodes.com  
November 2009  
© Diodes Incorporated  
DMN3051LDM  
Document number: DS31523 Rev. 3 - 2  
DMN3051LDM  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
30  
V
BVDSS  
IDSS  
800  
VGS = 0V, ID = 250μA  
VDS = 30V, VGS = 0V  
nA  
VGS = ±12V, VDS = 0V  
±80  
±800  
Gate-Source Leakage  
nA  
IGSS  
V
GS = ±20V, VDS = 0V  
ON CHARACTERISTICS (Note 4)  
Gate Threshold Voltage  
1.2  
2.2  
V
VGS(th)  
28  
50  
VDS = VGS, ID = 250μA  
VGS = 10V, ID = 6A  
VGS = 4.5V, ID = 5A  
VDS = 5V, ID = 3.1A  
VGS = 0V, IS = 2A  
38  
64  
Static Drain-Source On-Resistance  
RDS (ON)  
mΩ  
Forward Transfer Admittance  
Diode Forward Voltage (Note 4)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
5.2  
S
V
|Yfs|  
VSD  
1.16  
0.78  
424  
115  
81  
pF  
pF  
pF  
Ω
Ciss  
Coss  
Crss  
RG  
Output Capacitance  
VDS = 5V, VGS = 0V, f = 1.0MHz  
VGS = 0V VDS = 0V, f = 1MHz  
Reverse Transfer Capacitance  
Gate Resistance  
1.3  
SWITCHING CHARACTERISTICS  
VDS = 10V, VGS = 4.5V, ID = 10A  
VDS = 10V, VGS = 10V, ID = 10A  
VDS = 10V, VGS = 10V, ID = 10A  
VDS = 10V, VGS = 10V, ID = 10A  
4.3  
8.6  
Total Gate Charge  
Qg  
nC  
Gate-Source Charge  
Gate-Drain Charge  
1.2  
2.5  
Qgs  
Qgd  
Notes:  
4. Short duration pulse test used to minimize self-heating effect.  
9.0  
6
5
V
= 10V  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
GS  
V
= 4.5V  
GS  
V
= 5V  
DS  
4
3
2
T
= 150°C  
A
T
= 125°C  
A
T
= 85°C  
A
1
0
V
= 3.0V  
GS  
T
= 25°C  
V
= 2.5V  
= 1.8V  
A
GS  
1.0  
0
T
= -55°C  
V
A
GS  
0
0.5  
1
1.5  
2
2.5  
3
1.5  
2.5  
3.5  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 Typical Output Characteristics  
VGS, GATE SOURCE VOLTAGE (V)  
Fig. 2 Typical Transfer Characteristics  
2 of 5  
www.diodes.com  
November 2009  
© Diodes Incorporated  
DMN3051LDM  
Document number: DS31523 Rev. 3 - 2  
DMN3051LDM  
0.1  
0.10  
0.09  
0.09  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
T
= 150°C  
= 125°C  
A
0.08  
0.07  
0.06  
0.05  
T
A
T
= 85°C  
= 25°C  
A
V
= 4.5V  
= 10V  
GS  
T
A
V
GS  
0.02  
0.01  
0
T
= -55°C  
A
0.04  
0.03  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
ID, DRAIN CURRENT (A)  
ID, DRAIN CURRENT (A)  
Fig. 4 Typical Drain-Source On-Resistance  
vs. Drain Current and Temperature  
Fig. 3 Typical On-Resistance  
vs. Drain Current and Gate Voltage  
1.6  
1.5  
1.4  
V
I
= 10V  
GS  
C
iss  
= 5.8A  
D
1.3  
1.2  
V
= 4.5V  
= 5A  
GS  
I
D
1.1  
1.0  
0.9  
C
oss  
C
rss  
0.8  
0.7  
0.6  
-50 -25  
0
25  
50  
75 100 125 150  
0
5
10  
15  
20  
25  
30  
TJ, JUNCTION TEMPERATURE (°C)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 6 Typical Capacitance  
Fig. 5 On-Resistance Variation with Temperature  
10  
3
I
= 250µA  
2.5  
D
1
0.1  
T
= 150°C  
A
2
1.5  
1
T
= 125°C  
A
T
= 85°C  
A
T
= 25°C  
A
0.01  
T
= -55°C  
A
0.001  
0.5  
0
0.0001  
0.1  
0.3  
0.5  
0.7  
0.9  
1.1  
-50 -25  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 7 Gate Threshold Variation vs. Ambient Temperature  
0
25  
50  
75 100 125 150  
VSD, SOURCE-DRAIN VOLTAGE (V)  
Fig. 8 Diode Forward Voltage vs. Current  
3 of 5  
www.diodes.com  
November 2009  
© Diodes Incorporated  
DMN3051LDM  
Document number: DS31523 Rev. 3 - 2  
DMN3051LDM  
Ordering Information (Note 5)  
Part Number  
Case  
Packaging  
DMN3051LDM-7  
SOT-26  
3000/Tape & Reel  
Notes:  
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
3N5 = Marking Code  
YM = Date Code Marking  
Y = Year (ex: V = 2008)  
M = Month (ex: 9 = September)  
3N5  
Date Code Key  
Year  
2008  
2009  
2010  
2011  
2012  
2013  
2014  
2015  
Code  
V
W
X
Y
Z
A
B
C
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
Package Outline Dimensions  
A
SOT-26  
Dim Min Max Typ  
A
B
C
D
H
J
K
L
M
0.35 0.50 0.38  
1.50 1.70 1.60  
2.70 3.00 2.80  
B
C
0.95  
2.90 3.10 3.00  
0.013 0.10 0.05  
1.00 1.30 1.10  
0.35 0.55 0.40  
0.10 0.20 0.15  
H
K
M
J
0°  
8°  
α
L
D
All Dimensions in mm  
Suggested Pad Layout  
E
E
Dimensions Value (in mm)  
Z
G
X
Y
C
E
3.20  
1.60  
0.55  
0.80  
2.40  
0.95  
C
G
Z
Y
X
4 of 5  
www.diodes.com  
November 2009  
© Diodes Incorporated  
DMN3051LDM  
Document number: DS31523 Rev. 3 - 2  
DMN3051LDM  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2009, Diodes Incorporated  
www.diodes.com  
5 of 5  
www.diodes.com  
November 2009  
© Diodes Incorporated  
DMN3051LDM  
Document number: DS31523 Rev. 3 - 2  

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