DMN3052L [TYSEMI]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | DMN3052L |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总2页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DMN3052L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
•
Low On-Resistance:
RDS(ON) < 32mΩ @ VGS = 10V
•
•
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
R
DS(ON) < 42mΩ @ VGS = 4.5V
DS(ON) < 64mΩ @ VGS = 2.5V
•
•
R
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
•
•
SOT-23
Drain
D
Gate
S
G
Source
TOP VIEW
TOP VIEW
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
V
VGSS
±12
Drain Current (Note 1)
TA = 25°C
TA = 70°C
Pulsed
5.4
4.6
A
ID
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
19
2.0
A
A
IDM
IS
Thermal Characteristics
Characteristic
Symbol
Value
1.4
Unit
W
Total Power Dissipation (Note 1)
PD
90
°C/W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Rθ
JA
-55 to +150
°C
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
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Product specification
DMN3052L
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
30
V
BVDSS
IDSS
⎯
⎯
⎯
1
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
⎯
μA
±80
±800
Gate-Body Leakage
nA
IGSS
⎯
⎯
V
GS = ±19V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
0.62
0.9
1.2
V
VGS(th)
V
DS = VGS, ID = 250μA
26
33
52
78
32
42
64
V
V
GS = 10V, ID = 5.8A
GS = 4.5V, ID = 5.0A
⎯
⎯
⎯
⎯
Static Drain-Source On-Resistance
RDS (ON)
mΩ
VGS = 2.5V, ID = 3.8A
100
V
V
V
GS = 2.0V, ID = 2.0A
DS = 5V, ID = 3.1A
GS = 0V, IS = 2.0A
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
8
S
V
|Yfs|
VSD
⎯
⎯
⎯
1.2
0.75
555
109
82
pF
pF
pF
Ciss
Coss
Crss
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 5V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Total Gate Charge
6.3
1.3
1.7
VGS = 4.5V, VDS = 15V,
ID = 5.8A
Gate-Source Charge
nC
Qgs
Qgd
Gate-Drain Charge
Notes:
3. Short duration pulse test used to minimize self-heating effect.
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