DMN3050S-7 [DIODES]
Power Field-Effect Transistor, 5.2A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3;
| 型号： | DMN3050S-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, 5.2A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3050S
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
•
Low On-Resistance:
•
•
Case: SOT-23
35mΩ @ VGS = 10V
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
50mΩ @ VGS = 4.5V
•
•
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
•
•
•
•
Qualified to AEC-Q 101 Standards for High Reliability
Drain
SOT-23
D
Gate
S
G
Source
TOP VIEW
TOP VIEW
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
V
VGSS
±20
Drain Current (Note 1)
TA = 25°C
5.2
4.2
A
ID
TA = 70°C
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
Pulsed
20
2.0
A
A
IDM
IS
Thermal Characteristics
Characteristic
Symbol
Value
1.4
Unit
W
Total Power Dissipation (Note 1)
PD
90
°C/W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Rθ
JA
-55 to +150
°C
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
30
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
1
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
μA
nA
IGSS
±100
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
1
1.5
3
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5.2A
VGS = 4.5V, ID = 4.2A
VDS = 5V, ID = 5.2A
VGS = 0V, IS = 1.0A
⎯
⎯
⎯
⎯
27
40
35
50
Static Drain-Source On-Resistance
RDS (ON)
mΩ
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
6.5
0.7
S
V
gfs
⎯
1
VSD
390
55
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 15V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
45
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
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www.diodes.com
November 2008
© Diodes Incorporated
DMN3050S
Document number: DS31503 Rev. 3 - 2
DMN3050S
20
16
20
18
V
= 5V
DS
V
= 10V
GS
V
= 4.5V
GS
16
14
12
10
12
8
V
= 2.0V
GS
8
6
4
V
= 1.5V
GS
T
= 150°C
A
4
0
V
V
= 3.0V
GS
T
= 125°C
A
T
= 85°C
A
T
= 25°C
2
0
A
= 2.5V
GS
T
= -55°C
A
1
1.5
2
2.5
3
3.5
4
4.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
VGS, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.06
0.05
0.07
0.06
T
= 150°C
= 125°C
A
T
A
0.04
0.03
0.02
V
V
= 4.5V
= 10V
GS
0.05
0.04
T
= 85°C
A
GS
T
= 25°C
A
0.03
0.02
0.01
0
T
= -55°C
A
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10
12
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1,000
1.8
1.6
1.4
f = 1MHz
V
= 0V
GS
C
iss
V
= 4.5V
= 5A
GS
I
D
V
= 10V
GS
1.2
1.0
100
I
= 10A
D
C
oss
C
rss
0.8
0.6
10
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
Fig. 5 On-Resistance Variation with Temperature
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November 2008
© Diodes Incorporated
DMN3050S
Document number: DS31503 Rev. 3 - 2
DMN3050S
2.0
1.8
20
18
16
14
1.6
1.4
1.2
12
10
8
I
= 1mA
D
I
= 250µA
D
T
= 150°C
A
6
T
= 125°C
A
T
= 85°C
4
A
1.0
0.8
T
= 25°C
A
2
0
T
= -55°C
A
-50 -25
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1
1.2
TA, AMBIENT TEMPERATURE (°C)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1
Fig. 8 Diode Forward Voltage vs. Current
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
R
(t) = r(t) * R
θJA
D = 0.02
D = 0.01
θ
JA
R
= 176°C/W
θ
JA
0.01
P(pk)
T
t
1
D = 0.005
D = Single Pulse
t
2
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000
10,000
t1, PULSE DURATION TIME (s)
Fig. 9 Transient Thermal Response
Ordering Information (Note 5)
Part Number
Case
Packaging
DMN3050S-7
SOT-23
3000/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
3N2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
3N2
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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November 2008
© Diodes Incorporated
DMN3050S
Document number: DS31503 Rev. 3 - 2
DMN3050S
Package Outline Dimensions
A
SOT-23
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
M
K
K1
K1
L
M
-
D
F
J
0.45
0.085 0.18
0° 8°
0.61
L
G
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
C
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
E
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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www.diodes.com
November 2008
© Diodes Incorporated
DMN3050S
Document number: DS31503 Rev. 3 - 2
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