ASISD1542-42 [ASI]
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 X 0.500 INCH, HERMETIC SEALED, FM-2;型号: | ASISD1542-42 |
厂家: | ADVANCED SEMICONDUCTOR |
描述: | RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 X 0.500 INCH, HERMETIC SEALED, FM-2 局域网 CD 开关 晶体管 |
文件: | 总2页 (文件大小:142K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ASI SD1542-42
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .400 X 500 2L FLG
The ASI SD1542-42 is a Common
Base Device Designed for, IFF and
DME Pulse Applications.
FEATURES INCLUDE:
• Gold Metalization
• Input/Output Matching
• Hermetically Sealed
MAXIMUM RATINGS
45 A
55 V
IC
VCC
PDISS
TJ
1670 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
0.06 °C/W
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 25 mA
IC = 25 mA
IE = 10 mA
VCE = 50 V
VCE = 5.0 V
65
V
BVCER
BVEBO
ICES
65
V
RBE = 10 Ω
3.5
V
60
mA
---
hFE
IC = 2.0 A
10
250
VCC = 50 V
WIDTH = 10 µS
PIN = 150 W f = 1090 MHz PULSE
DUTY CYCLE = 1.0%
PG
ηC
6.0
35
6.6
40
dB
%
600
680
W
POUT
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/2
Specifications are subject to change without notice.
SD1542-42
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
2/2
Specifications are subject to change without notice.
相关型号:
ASITVU005
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
ASI
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