ASITVU005 [ASI]
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,;
| 型号： | ASITVU005 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, 放大器 晶体管 |
| 文件： | 总1页 (文件大小：20K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ASI TVU005
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .280 4L STUD
The ASI TVU005 is a Common
Emitter Device Designed for High
Linearity Class A Television Band IV
and V Transmitters.
FEATURES INCLUDE:
· Gold Metalization
· Emitter Ballasting
MAXIMUM RATINGS
IC
500 mA
VCB
PDISS
TJ
45 V
8.0 W @ TC = 25 OC
-55 OC to +200 OC
-55 OC to +200 OC
22.0 OC/W
TSTG
qJC
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCEO
BVCBO
BVEBO
hFE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 20 mA
IC = 1.0 mA
IE = 1.0 mA
VCE = 5.0 V
24
V
45
V
3.5
20
V
IC = 100 mA
IC = 220 mA
120
-58
---
Cob
VCB = 28 V
f = 1.0 MHz
5.0
11
pF
dB
VCE = 20 V
Pref = 0.5 W
f = 860 MHz
10
PG
VISION CARRIER = -8.0 dB
SOUND CARRIER = -7.0 dB
IMD3
CHROMA = -16 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are Subject to change without notic.
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