ASIUTV200 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASIUTV200 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UTV200
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UTV200 is Designed for
Class A. UHF Television Applications
up to 860 MHz.
PACKAGE STYLE .420 4L FLG.
FEATURES INCLUDE:
• Internal Input Matching
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
4.5 A
IC
VCE
PDISS
TJ
28 V
80 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
1.2 OC/W
1 = COLLECTOR
2 = EMITTER
3 = BASE
TSTG
θJC
CHARACTERISTICS TC = 25 O
C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 40 mA
IC = 20 mA
IE = 10 mA
VCB = 30 V
VCE = 5.0 V
28
V
BVCES
BVEBO
ICBO
50
V
4.0
V
50
mA
---
hFE
IC = 1.0 A
10
150
Cob
VCB = 26 V
f = 1.0 MHz
f = 470 - 860
36
pF
9.5
PG
8.5
dB
---
VCE = 26 V
POUT = 20 W
VSRW
MHz
3:1
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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