ASITPV593 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASITPV593 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPV593
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV593 is a Common
Emitter Device Designed for Class A
High Linearity Television Band IV and
V Transmitter Applications.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
· Gold Metalization
· Emitter Ballasting
· High Gain
MAXIMUM RATINGS
IC
1.2 A
VCB
PDISS
TJ
45 V
17.5 W @ TC = 25 OC
-55 OC to +200 OC
-55 OC to +200 OC
10 OC/W
TSTG
qJC
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 OC
NONE
SYMBOL
BVCEO
BVCBO
BVEBO
hFE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 40 mA
IC = 10 mA
IE = 10 mA
VCE = 5.0 V
26
V
45
V
4.0
10
V
IC = 250 mA
---
Cob
VCB = 28 V
f = 1.0 MHz
8.0
12
pF
dB
Po = 2.0 W
VISION CARRIER = -8.0 dB
VCE = 25 V
SOUND CARRIER = -10 dB
CHROMA = 16 dB
IC = 410 mA f = 860 MHz
10
PG
Po = 2.0 W
VISION CARRIER = -8.0 dB
VCE = 25 V
SOUND CARRIER = -10 dB
CHROMA = 16 dB
IMD3
-60
dBc
IC = 410 mA
f = 860 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
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