ASITPV6030 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASITPV6030 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPV6030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV6030 is Designed for
Television Band IV & V Applications
up to 860 MHz.
PACKAGE STYLE .400 BAL FLG(C)
A
.080x45°
B
FULL R
(4X).060 R
FEATURES:
E
M
D
• Common Emitter
C
• PG = 9.5 dB at 35 W/860 MHz
• Omnigold™ Metalization System
.1925
F
G
H
N
I
L
K
MAXIMUM RATINGS
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
15 A
28 V
IC
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
.210 / 5.33
VCEO
VCBO
VEBO
PDISS
TJ
.120 / 3.05
.380 / 9.65
.780 / 19.81
.130 / 3.30
.390 / 9.91
.820 / 20.83
55 V
.435 / 11.05
1.090 / 27.69
4.0 V
1.335 / 33.91
.003 / 0.08
.060 / 1.52
.082 / 2.08
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.100 / 2.54
.205 / 5.21
.407 / 10.34
.870 / 22.10
160 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.1 °C/W
J
K
L
.395 / 10.03
.850 / 21.59
M
N
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 35 mA
IC = 35 mA
IE = 10 mA
VCE = 30 V
VCE = 10 V
55
V
40
BVCER
BVEBO
ICER
V
RBE = 75 Ω
4.0
V
10
mA
---
RBE = 75 Ω
IC = 2.0 A
15
100
hFE
V
CB = 28 V
f = 1.0 MHz
f = 860 MHz
45
COB
pF
VCC = 25 V
POUT = 20 W
IC = 4.5 A
IC = 4.5 A
95
35
10.5
-52
40
PG
dB
-51
IMD
dBc
VCE = 25 V
f = 860 MHz
POUT
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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