ASITPV385 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASITPV385 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总1页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPV385
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV385 is Designed for
Operation in Band III TV Transposers
and Transmitter Amplifiers from
170 to 230 MHz.
PACKAGE STYLE 500 6L FLG
FEATURES INCLUDE:
• Gold Metalization
• Emitter Ballast Resistors
• Internal Input Matching
• Common Emitter
MAXIMUM RATINGS
10 A (CONT)
65 V
IC
VCB
VCE
TJ
35 V
-65 °C to +200 °C
-65 °C to +200 °C
1.5 °C/W
1 = COLLECTOR
2 = BASE
TSTG
θJC
3 & 4 = EMITTER
CHARACTERISTICS TC = 25 O
C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 50 mA
IC = 50 mA
IE = 10 mA
VCE = 5.0 V
35
60
65
4.0
20
V
BVCER
BVCBO
BVEBO
hFE
RBE = 10 Ω
V
V
V
IC = 1.0 A
100
85
---
Cob
VCB = 30 V
VCE = 28 V
f = 1.0 MHz
65
15
pF
GP
14
dB
dB
Pout = 14 W
f = 225 MHz
f = 225 MHz
IMD1
-53
V
P
CE = 28 V
out = 14 W
ALL PHASEANGLES
ψ
NO DEGRADATION IN OUTPUT POWER
LOAD VSWR = :1
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
相关型号：
ASITVU005
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
ASI
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