ASITPV376 [ASI]
NPN SILICON RF POWER TRANSISTOR; NPN硅射频功率晶体管
| 型号： | ASITPV376 |
| 厂家： | 
ADVANCED SEMICONDUCTOR |
| 描述： | NPN SILICON RF POWER TRANSISTOR |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPV376
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV376 is a Common
Emitter Device Designed for High
Linearity Class A Television Band III
(170-230 MHz) Applications.
PACKAGE STYLE .550 4L STUD(1/4)
FEATURES INCLUDE:
· Gold Metalization
· Emitter Ballasting
MAXIMUM RATINGS
IC
16 A
VCB
PDISS
TJ
60 V
150 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
1.2 OC/W
TSTG
qJC
CHARACTERISTICS TC = 25 OC
SYMBOL
BVCEO
BVCER
BVCBO
BVEBO
hFE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IC = 100 mA
IE = 20 mA
VCE = 5.0 V
30
60
60
4.0
10
V
RBE = 10 W
V
V
V
IC = 1.0 A
120
150
---
Cob
VCB = 30 V
VCE = 28 V
f = 1.0 MHz
f = 225 MHz
pF
W
Pout
IC = 3.5 A
IE = 3.5 A
20
VCE = 28 V
PREF =20 W
f = 225 MHz
y
NO DEGRADATION IN OUTPUT POWER
LOAD VSWR = ¥ :1
Pref = 30 W
SOUND CARRIER = -7.0 dB
VCE = 28 V
VISION CARRIER = -8.0 dB
SIDEBAND SIG. = -16 dB
IE = 3.5 A f = 225 MHz
IMD1
-53
dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004
Specifications are subject to change without notice.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1202 · TELEX: 18-2651 · FAX (818) 765-3004
相关型号：
ASITVU005
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
ASI
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