AON3402_10 [AOS]
20V N-Channel MOSFET; 20V N沟道MOSFET
| 型号： | AON3402_10 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 20V N-Channel MOSFET |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON3402
20V N-Channel MOSFET
General Description
Product Summary
The AON3402 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating.This device is suitable
for use as load switch and general purpose FET
application.
VDS (V) = 20V
ID = 12.6A (VGS = 4.5V)
RDS(ON) < 13mΩ (VGS = 4.5V)
R
DS(ON) < 17mΩ (VGS = 2.5V)
RDS(ON) < 26mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
100% Rg Tested
DFN 3x3
Top View
Bottom View
D
Top View
1
8
2
3
7
6
G
4
5
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
A
TA=25°C
TA=70°C
12.6
Continuous Drain
Current A
ID
10
Pulsed Drain Current B
IDM
40
3.1
TA=25°C
TA=70°C
PD
W
°C
Power Dissipation A
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
30
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
40
80
25
RθJA
Steady-State
Steady-State
65
Maximum Junction-to-Lead C
RθJL
20
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
20
V
V
DS=16V, VGS=0V
10
25
10
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=12A
IGSS
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
µA
V
BVGSO
VGS(th)
ID(ON)
±12
0.5
40
0.78
1
V
On state drain current
A
10.3
14.4
14.3
21.7
37
13
18
17
26
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=2.5V, ID=10.5A
VGS=1.8V, ID=8.5A
mΩ
mΩ
S
V
DS=5V, ID=12A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
0.73
1
V
Maximum Body-Diode Continuous Current
4.8
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1810
232
200
1.6
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=12A
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
17.9
1.5
4.7
2.5
7.2
49
nC
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=10V, RL=1.0Ω,
RGEN=3Ω
tD(off)
tf
10.8
20.2
8
trr
IF=12A, dI/dt=100A/µs
IF=12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
30
25
20
15
10
5
10
2.5V
4.5V
VDS=5V
2V
125°C
VGS=1.5V
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
VGS(Volts)
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
25
20
15
10
5
1.6
1.4
1.2
1
VGS=1.8V
VGS=4.5V
ID=12A
VGS=2.5V
ID=10.5A
VGS=2.5V
VGS=4.5V
VGS=1.8V
ID=8.5A
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
40
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=12A
35
30
25
20
15
10
5
125°C
125°C
25°C
25°C
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
5
4
3
2
1
0
VDS=10V
ID=12A
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
4
8
12
16
20
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
10µs
30
20
10
0
100µs
1ms
limited
10ms
0.1s
1s
TJ(Max)=150°C
TA=25°C
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=80°C/W
1
0.1
PD
Single Pulse
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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