AON3406 [AOS]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AON3406 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总4页 (文件大小：424K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON3406
30V N-Channel MOSFET
General Description
Features
The AON3406 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
VDS (V) = 30V
ID = 10A (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 10V)
R
DS(ON) < 24mΩ (VGS = 4.5V)
DFN 3x3
D
Top View
Bottom View
Top View
1
8
2
3
7
6
4
G
5
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
V
Gate-Source Voltage
VGS
±20
10
TA=25°C
TA=70°C
Continuous Drain
Current A
ID
A
7.8
Pulsed Drain Current B
IDM
30
TA=25°C
TA=70°C
3.0
PD
W
°C
Power Dissipation A
1.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
32
Max
42
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Steady-State
Steady-State
65
100
35
Maximum Junction-to-Lead C
RθJL
25
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=24V, VGS=0V
0.003
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3
nA
V
VGS(th)
ID(ON)
1.4
30
1.75
A
V
GS=10V, ID=10A
12
18
15
22
24
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
GS=4.5V, ID=9A
18
mΩ
S
VDS=5V, ID=10A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
0.73
1
4
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
955
145
112
0.5
1200
0.85
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
17
9
24
12
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=10A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3.4
4.7
5
6.5
7.5
25
6
V
GS=10V, VDS=15V, RL=1.5Ω,
6
ns
RGEN=3Ω
tD(off)
tf
19
4.5
19
9
ns
ns
trr
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
21
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2 : Nov 2009
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4.5V
32
VDS=5V
5V
25
20
15
10
5
28
24
20
16
12
8
4V
10V
125°C
3.5V
25°C
4
4
VGS=3V
4
0
0
1.5
2
2.5
3
GS(Volts)
3.5
4.5
0
1
2
3
5
V
VDS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
22
20
18
16
14
12
10
1.8
VGS=4.5V
VGS=10V
ID=10A
1.6
1.4
1.2
1
VGS=4.5V
ID=9A
VGS=10V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=10A
40
30
125°C
125°C
25°C
1.0E-03
G
20
25°C
1.0E-04
1.0E-05
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
8
VDS=15V
ID=10A
1250
1000
750
500
250
0
Ciss
6
4
Coss
2
0
Crss
0
4
8
12
16
20
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
100
TJ(Max)=150°C
10µs
TA=25°C
80
60
40
20
0
RDS(ON)
limited
100µs
1ms
DC
10ms
100ms
TJ(Max)=150°C
TA=25°C
0.1
10s
0.0
0.0001 0.001 0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=42°C/W
1
NG
0.1
PD
SinglePulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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