AON3408 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AON3408 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AON3408
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON3408 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AON3408 is Pb-free (meets ROHS & Sony
259 specifications).
V(V)=30V
DS
ID=8.8A(V =10V)
GS
R<24mΩ(VGS =10V)
DS(ON)
R<29mΩ(V=4.5V)
DS(ON)
GS
RDS(ON) < 45mΩ (VGS = 2.5V)
DFN 3x3
Top View
Bottom View
D
S
S
S
D
D
D
D
G
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±12
8.5
7.2
40
V
TA=25°C
TA=70°C
A
IDSM
IDM
Pulsed Drain Current B
A
TA=25°C
TA=70°C
3.0
1.9
PDSM
W
°C
Power Dissipation
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
32
Max
Units
°C/W
°C/W
°C/W
t ≤ 10s
42
100
35
RθJA
Steady-State
Steady-State
65
RθJL
25
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3408
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250uA, VGS=0V
VDS=24V, VGS=0V
30
V
1
5
IDSS
Zero Gate Voltage Drain Current
uA
TJ=125°C
TJ=125°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±12V
100
1.5
nA
V
VGS(th)
ID(ON)
V
DS=VGS ID=250µA
VGS=4.5V, VDS=5V
GS=10V, ID=8.8A
0.7
40
1
A
V
20
28
24
34
29
45
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS=4.5V, ID=8A
VGS=2.5V, ID=5A
VDS=5V, ID=8.8A
IS=1A,VGS=0V
23
34.5
26
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.72
1.0
4.0
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
900
88
1100
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
65
VGS=0V, VDS=0V, f=1MHz
0.95
1.5
13
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
10
1.8
3.75
3.2
3.5
21.5
2.7
16.8
8
VGS=4.5V, VDS=15V, ID=8.5A
nC
nC
ns
ns
ns
ns
V
GS=10V, VDS=15V, RL=1.7Ω,
GEN=3Ω
R
tD(off)
tf
trr
IF=8.8A, dI/dt=100A/µs
IF=8.8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
20
ns
Qrr
nC
A: The value of R
is measured with the device in a still air environment with TA =25°C. The power dissipation PDSM and current rating IDSM are
θJA
based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25°C. The SOA curve
A
provides a single pulse rating.
Rev0:Oct. 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
20
16
12
8
10V
VDS=5V
4.5V
3V
125°C
2.5V
25°C
4
VGS=2V
5
0
0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
VDS(Volts)
Figure 2: Transfer Characteristics
V
GS(Volts)
Figure 1: On-Region Characteristics
28
26
24
22
20
18
16
1.8
1.5
ID=8A
V=4.5V
GS
VGS=4.5V
1.2
VGS=10V
ID=8.8A
0.9
0.6
VGS=10V
50
0
5
10
15
20
75
-50 -25
0
25
100 125 150 175
ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature
60
1.0E+01
55
50
45
40
35
30
1.0E+00
ID=8.8A
125°C
125°C
1.0E-01
1.0E-02
1.0E-03
25°C
25
G
1.0E-04
20
1.0E-05
25°C
15
1.0E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON3408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1400
1200
1000
800
600
400
200
0
VDS=15V
ID=8.8A
Ciss
Crss
C
oss
0
2
4
6
8
12
10
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure7:Gate-ChargeCharacteristics
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
100
80
10µs
TJ(Max)=150°C
TA=25°C
100µs
60
10s
RDS(ON)
limited
1ms
40
DC
0.10
20
TJ(Max)=150°C
TA=25°C
0.1
0
0.01
0.0001 0.001
0.01
1
10
100
0.01
0.1
1
10100
Pulse Width (s)
V
DS (Volts)
Figure 9: Maximum ForwardBiasedSafe
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
D=Ton/T
G
0.01
TJ,PK=TA+PDM.ZθJA.RθJA
Ton
SinglePulse
RθJA=42°C/W
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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