AON3406 [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET型号: | AON3406 |
厂家: | Freescale |
描述: | 30V N-Channel MOSFET |
文件: | 总4页 (文件大小:656K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AON3406
30V N-Channel MOSFET
General Description
provide excellent R
The AON3406 uses advanced trench technology to
DS(ON) and low gate charge. This
ow
applications. The source leads are separated to all
device is suitable for use as a load switch or in PWM
a Kelvin connection to the source, which may be used to bypass the source inductance.
Features
VDS (V) = 30V
ID = 10A (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 4.5V)
D
Top View
1
8
2
3
7
6
4
G
5
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
10
V
A
TA=25°C
TA=70°C
Continuous Drain
Current A
ID
7.8
Pulsed Drain Current B
IDM
30
TA=25°C
TA=70°C
3.0
PD
W
°C
Power Dissipation A
1.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
32
Max
42
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Steady-State
Steady-State
65
100
35
Maximum Junction-to-Lead C
RθJL
25
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AON3406
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=24V, VGS=0V
0.003
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3
nA
V
VGS(th)
ID(ON)
1.4
30
1.75
A
V
GS=10V, ID=10A
12
18
15
22
24
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
GS=4.5V, ID=9A
18
mΩ
S
VDS=5V, ID=10A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
0.73
1
4
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
955
145
112
0.5
1200
0.85
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
17
9
24
12
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=10A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
3.4
4.7
5
6.5
7.5
25
6
V
GS=10V, VDS=15V, RL=1.5Ω,
6
ns
RGEN=3Ω
tD(off)
tf
19
4.5
19
9
ns
ns
trr
IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs
21
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2 : Nov 2009
2 / 4
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AON3406
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4.5V
32
VDS=5V
5V
25
20
15
10
5
28
24
20
16
12
8
4V
10V
125°C
3.5V
25°C
4
4
VGS=3V
4
0
0
1.5
2
2.5
3
GS(Volts)
3.5
4.5
0
1
2
3
5
V
V
DS (Volts)
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
22
20
18
16
14
12
10
1.8
VGS=4.5V
VGS=10V
ID=10A
1.6
1.4
1.2
1
VGS=4.5V
ID=9A
VGS=10V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
50
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=10A
40
30
125°C
125°C
25°C
1.0E-03
G
20
25°C
1.0E-04
1.0E-05
10
0.0
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
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AON3406
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
1250
10
8
VDS=15V
ID=10A
Ciss
1000
750
500
250
0
6
4
Coss
2
0
Crss
0
4
8
12
16
20
0
5
10
15
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
DS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
100
TJ(Max)=150°C
10µs
TA=25°C
80
60
40
20
0
RDS(ON)
limited
100µs
1ms
DC
10ms
100ms
TJ(Max)=150°C
TA=25°C
0.1
10s
0.0
0.0001 0.001 0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=42°C/W
1
NG
0.1
PD
SinglePulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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