AO4616_11 [AOS]
30V Complementary MOSFET; 30V互补MOSFET
| 型号： | AO4616_11 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 30V Complementary MOSFET |
| 文件： | 总9页 (文件大小：387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4616
30V Complementary MOSFET
General Description
Product Summary
The AO4616 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This
N-Channel
P-Channel
VDS= 30V
-30V
complementary N and P channel MOSFET configuration
is ideal for low Input Voltage inverter applications.
ID= 8A (VGS=10V)
RDS(ON)
-7A (VGS=-10V)
RDS(ON)
< 20mꢀ (VGS=10V)
< 28mꢀ (VGS=4.5V)
< 22mꢀ (VGS=-10V)
< 40mꢀ (VGS=-4.5V)
100% UIS Tested
100% Rg Tested
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
D2
D1
Top View
Bottom View
Top View
S2
D2
D2
D1
D1
G2
S1
G1
G2
G1
S1
S2
Pin1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Max n-channel
Max p-channel
Units
Drain-Source Voltage
Gate-Source Voltage
30
±20
8
-30
±20
-7
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
A
6.5
40
-6
IDM
-40
IAS, IAR
EAS, EAR
19
18
2
27
36
2
A
Avalanche energy L=0.1mH C
mJ
TA=25°C
PD
W
°C
Power Dissipation B
TA=70°C
1.3
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
74
RθJL
32
40
Rev 2: Jan. 2011
www.aosmd.com
Page 1 of 9
AO4616
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
VDS=0V, VGS=±16V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
2.4
µA
V
VGS(th)
ID(ON)
1.2
40
1.8
A
16.5
23
20
28
28
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=6A
VDS=5V, ID=8A
IS=1A,VGS=0V
19.5
30
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.75
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
600
77
740
110
82
888
145
115
1.7
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
50
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
12
6
15
7.5
2.5
3
18
9
nC
nC
nC
nC
ns
VGS=10V, VDS=15V, ID=8A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
5
Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
3.5
19
3.5
8
ns
tD(off)
tf
Turn-Off DelayTime
ns
Turn-Off Fall Time
ns
trr
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs
6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10
22
ns
Qrr
14
nC
18
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Jan. 2011
www.aosmd.com
Page 2 of 9
AO4616
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
VDS=5V
4V
3.5V
3V
10V
125°C
25°C
VGS=2.5V
4
0
0
1
1.5
2
2.5
3
3.5
4
0
1
2
3
5
V
DS (Volts)
V
GS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
30
1.6
1.4
1.2
1
VGS=4.5V
ID=6A
25
20
15
10
VGS=4.5V
VGS=10V
VGS=10V
ID=8A
0.8
0
5
10
ID (A)
15
20
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
40
35
30
25
20
15
10
1.0E+02
1.0E+01
ID=8A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0
2
4
6
8
10
0.0
0.2
0.4
0.6
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Jan. 2011
www.aosmd.com
Page 3 of 9
AO4616
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
1000
800
600
400
200
0
VDS=15V
ID=8A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
VDS (Volts)
20
25
30
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
1000
TA=25°C
10µs
RDS(ON)
limited
100
10
1
100µs
1ms
10ms
0.1
TJ(Max)=150°C
10s
DC
TA=25°C
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=90°C/W
PD
0.01
0.001
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Jan. 2011
www.aosmd.com
Page 4 of 9
AO4616
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 2: Jan. 2011
www.aosmd.com
Page 5 of 9
AO4616
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-30
V
VDS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
T
J=55°C
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
-2.5
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-7A
-1.4
-40
-2.0
A
17.5
24.5
27.5
24
22
33
40
mΩ
RDS(ON)
Static Drain-Source On-Resistance
T
J=125°C
V
V
GS=-4.5V, ID=-3.5A
DS=-5V, ID=-7A
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=-1A,VGS=0V
-0.75
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
830
125
75
1040 1250
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
180
125
4
235
175
6
2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
15
19
9.6
3.6
4.6
10
23
12
nC
nC
nC
nC
ns
7.5
VGS=10V, VDS=-15V, ID=-7A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
VGS=10V, VDS=-15V, RL=2.2Ω,
RGEN=3Ω
5.5
26
ns
tD(off)
tf
Turn-Off DelayTime
ns
Turn-Off Fall Time
9
ns
trr
IF=-7A, dI/dt=500A/µs
IF=-7A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
11.5
25
15
ns
Qrr
nC
32.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Jan. 2011
www.aosmd.com
Page 6 of 9
AO4616
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
60
50
40
30
20
10
0
VDS=-5V
-10V
-7V
-5V
-4.5V
125°C
-3.5V
VGS=-3V
4
25°C
4
0
1
2
3
5
0
1
2
3
5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
40
1.6
1.4
1.2
1
VGS=-10V
ID=-7A
35
30
25
20
15
10
VGS=-4.5V
VGS=-10V
=-4.5V
VGS
ID=-3.5A
0.8
0
5
10
-ID (A)
15
20
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
60
50
40
30
20
10
1.0E+02
1.0E+01
ID=-7A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
0.6
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Jan. 2011
www.aosmd.com
Page 7 of 9
AO4616
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1600
1400
1200
1000
800
600
400
200
0
VDS=-15V
ID=-7A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
-VDS (Volts)
20
25
30
0
5
10
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
TJ(Max)=150°C
10s
DC
TA=25°C
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.Rθ
JA
RθJA=90°C/W
0.1
PD
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Jan. 2011
www.aosmd.com
Page 8 of 9
AO4616
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 2: Jan. 2011
www.aosmd.com
Page 9 of 9
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