AO4617L [AOS]
Transistor;
| 型号： | AO4617L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4617
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
VDS (V) = 40V
ID = 6A (VGS=10V)
RDS(ON)
The AO4617 uses advanced trench
technology MOSFETs to provide excellen
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.Standard Product AO4617
is Pb-free (meets ROHS & Sony 259
specifications). AO4617L is a Green
Product ordering option. AO4617 and
AO4617L are electrically identical.
p-channel
-40V
-5A (VGS = -10V)
RDS(ON)
< 32mΩ (VGS=10V)
< 45mΩ (VGS=4.5V)
< 48mΩ (VGS = -10V)
< 75mΩ (VGS = -4.5V)
ESD rating: 3000V (HBM)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
D1
S1
D2
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
S2
SOIC-8
n-channel
p-channel
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Max n-channel
Max p-channel Units
VDS
Drain-Source Voltage
40
-40
V
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
±20
TA=25°C
TA=70°C
6
-5
A
ID
5
-4
-25
Pulsed Drain CurrentB
IDM
30
TA=25°C
TA=70°C
2
1.28
2
PD
W
Power Dissipation
Avalanche CurrentB
1.28
17
IAR
13
A
Repetitive avalanche energy 0.3mHB
EAR
25
43
mJ
°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
n-ch
Typ
48
Max Units
62.5 °C/W
110 °C/W
50 °C/W
Maximum Junction-to-AmbientA
t ≤ 10s
RθJA
RθJL
RθJA
RθJL
Maximum Junction-to-AmbientA
n-ch
74
Steady-State
Maximum Junction-to-LeadC
Steady-State
n-ch
35
Maximum Junction-to-AmbientA
Maximum Junction-to-AmbientA
p-ch
p-ch
p-ch
48
74
35
62.5 °C/W
110 °C/W
50 °C/W
t ≤ 10s
Steady-State
Maximum Junction-to-LeadC
Steady-State
Alpha & Omega Semiconductor, Ltd.
AO4617
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
VDS=32V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS= ±20V
DS=VGS ID=250µA
GS=10V, VDS=5V
GS=10V, ID=6A
±1
3
mA
V
VGS(th)
ID(ON)
1
2.2
30
A
26
39
32
48
45
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
DS=5V, ID=6A
IS=1A,VGS=0V
36
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
18
S
V
A
0.76
1
3
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
506
106
38
pF
pF
pF
Ω
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
2.6
3.9
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.4
4.1
1.6
2.7
4.8
2
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=10V, VDS=20V, ID=6A
Qgs
Qgd
tD(on)
tr
VGS=10V, VDS=20V, RL=3.3Ω,
RGEN=3Ω
ns
tD(off)
tf
17
ns
2.1
17.4
10.9
ns
trr
IF=6A, dI/dt=100A/µs
IF=6A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 0 : October 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4617
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
25
20
15
10
5
20
15
10
5
10V
5V
VDS=5V
4.5V
4V
125°C
VGS=3.5V
25°C
-40°C
0
0
0
1
2
3
4
5
2
2.5
3
3.5
GS(Volts)
4
4.5
5
VDS (Volts)
V
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
50
40
30
20
1.8
1.6
1.4
1.2
1
VGS=10V
ID=6A
VGS=4.5V
VGS=4.5V
ID=5A
VGS=10V
0.8
0.6
0
5
10
15
20
-50 -25
0
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
70
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=6A
60
50
40
30
20
10
125°C
125°C
25°C
-40°C
25°C
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4617
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
800
600
400
200
0
VDS=30V
ID= 6A
Ciss
6
4
Coss
Crss
2
0
0
10
20
DS (Volts)
30
40
0
2
4
6
8
10
V
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.00
10.00
1.00
40
TJ(Max)=150°C TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
30
20
10
0
100µs
10m
1ms
RDS(ON)
limited
10s
0.1s
0.10
DC
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4617
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
-40
V
VDS=-32V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-5A
±150
-3
VGS(th)
ID(ON)
-1
-2
V
A
-25
40
56
48
68
75
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
61
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
11
S
V
A
-0.76
-1
Maximum Body-Diode Continuous Current
3.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1006
152
77
pF
pF
pF
Ω
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
11
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
17.4
8.9
nC
nC
nC
nC
ns
Qg(4.5V)
V
GS=-10V, VDS=-20V, ID=-5A
Qgs
Qgd
tD(on)
tr
3.1
4.6
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.7
VGS=-10V, VDS=-20V, RL=4Ω,
6.3
ns
RGEN=3Ω
tD(off)
tf
35.5
26
ns
ns
trr
IF=-5A, dI/dt=100A/µs
IF=-5A, dI/dt=100A/µs
21.8
15.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any givenapplicationdependsontheuser'sspecificboarddesign.Thecurrentratingisbasedonthet≤10sthermal resistancerating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µspulses, dutycycle0.5%max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
T =25°C. The SOA curve provides a single pulse rating.
A
Rev 0 : October 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4617
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25
20
15
10
5
30
25
20
15
10
5
-10V
VDS=-5V
125°C
-5V
-4.5V
-4V
-6V
-40°C
25°C
-3.5V
VGS=-3V
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
80
70
60
50
40
30
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-5A
VGS=-4.5V
VGS=-4.5V
ID=-4A
VGS=-10V
0.8
0.6
0
2
4
6
8
10
-50 -25
0
25 50 75 100 125 150 175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
100
80
60
40
20
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
ID=-5A
125°C
125°C
25°C
25°C
-40°C
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
Alpha & Omega Semiconductor, Ltd.
AO4617
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1400
1200
1000
800
600
400
200
0
VDS=-30V
ID=-5A
8
Ciss
6
4
Coss
Crss
2
0
0
5
10
15
20
0
10
20
-VDS (Volts)
30
40
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
40
30
20
10
0
TJ(Max)=150°C, TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
100µs
1ms
RDS(ON)
limited
10ms
1s
0.1s
10s
DC
0.10
0.01
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
-VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
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