AO4620 [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AO4620 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4620
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4620 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications.Standard
Product AO4620 is Pb-free (meets ROHS
& Sony 259 specifications).
n-channel
p-channel
-30V
-5.3A (VGS = -10V)
RDS(ON)
VDS (V) = 30V
ID = 7.2A (VGS=10V)
RDS(ON)
< 24mΩ (VGS=10V)
< 36mΩ (VGS=4.5V)
< 38mΩ (VGS = -10V)
< 60mΩ (VGS = -4.5V)
D2
D1
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
SOIC-8
S2
S1
n-channel
p-channel
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter
Symbol
Max n-channel
Max p-channel Units
VDS
Drain-Source Voltage
30
±20
7.2
-30
±20
V
V
VGS
Gate-Source Voltage
Continuous Drain
Current F
Pulsed Drain CurrentB
TA=25°C
TA=70°C
-5.3
-4.5
-30
A
ID
6.2
IDM
30
TA=25°C
TA=70°C
2
2
PD
W
Power DissipationF
Avalanche CurrentB
1.44
13
1.44
17
IAR
A
Repetitive avalanche energy 0.3mHB
EAR
25
43
mJ
°C
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
50
80
Max Units
62.5 °C/W
100 °C/W
40 °C/W
Maximum Junction-to-AmbientA
n-ch
n-ch
n-ch
t ≤ 10s
Steady-State
Maximum Junction-to-LeadC
Steady-State
RθJA
Maximum Junction-to-AmbientA
RθJL
RθJA
32
Maximum Junction-to-AmbientA
p-ch
p-ch
p-ch
50
80
32
62.5 °C/W
100 °C/W
40 °C/W
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
RθJL
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4620
N-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.6
VGS=10V, VDS=5V
30
A
V
GS=10V, ID=7.2A
20
26
24
32
36
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
29
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=7.2A
IS=1A,VGS=0V
24
S
V
A
0.77
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
660
110
87
792
1.5
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.8
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
11.3 14.125
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
5.7
2.1
3
V
V
GS=10V, VDS=15V, ID=7.2A
4.5
3.1
15.1
2.7
ns
GS=10V, VDS=15V, RL=2.1Ω,
GEN=3Ω
R
tD(off)
tf
ns
ns
trr
IF=7.2A, dI/dt=100A/µs
IF=7.2A, dI/dt=100A/µs
15.5
7.1
20
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F.The power dissipation and current rating are based on the t≤ 10s thermal resistance rating.
Rev 1:Feb 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4620
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
5V
10V
VDS=5V
4.5V
6V
4V
125°C
3.5V
4
25°C
3.5
VGS=3V
0
0
0
1
2
3
4
5
1.5
2
2.5
3
4
4.5
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
35
30
25
20
15
1.6
1.4
VGS=10V
ID=7.2A
VGS=4.5V
VGS=4.5V
ID=5A
1.2
1
V
GS=10V
0.8
20
0.6
0
5
10
15
-50 -25
0
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=7.2A
50
40
125°C
125°C
25°C
30
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4620
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
800
600
400
200
0
10
8
VDS=15V
ID=7.2A
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
12
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
30
10µs
TJ(Max)=150°C
TA=25°C
25
20
15
10
5
100µs
1ms
RDS(ON)
limited
0.1s
10ms
10s
TJ(Max)=150°C
TA=25°C
DC
0.1
0
0.0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=100°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
P
D
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4620
P-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-30V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±20V
±100
-3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1
-2
VGS=-10V, VDS=-5V
-30
A
V
GS=-10V, ID=-5.3A
31
42
38
60
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4.5A
48
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-5.3A
IS=-1A,VGS=0V
15
S
V
A
-0.77
-1
Maximum Body-Diode Continuous Current
-2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
980
150
115
2.2
1225
pF
pF
pF
Ω
V
GS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3.3
24
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
18.7
9.6
3.2
4.8
7.7
6
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
VGS=-10V, VDS=-15V, ID=-5.3A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
ns
VGS=-10V, VDS=-15V, RL=2.8Ω,
R
GEN=3Ω
tD(off)
tf
20
7
ns
ns
trr
IF=-5.3A, dI/dt=100A/µs
IF=-5.3A, dI/dt=100A/µs
21
13
26
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The SOA curve provides a single pulse rating.
F.The power dissipation and current rating are based on the t≤ 10s thermal resistance rating.
Rev1:Feb 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4620
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
30
25
20
15
10
5
-4.5V
-10V
VDS=-5V
-4V
-3.5V
-6V
VGS=-3V
125°C
25°C
3.5
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
4
4.5
5
-VGS(Volts)
-VDS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
60
2.00
1.80
1.60
1.40
1.20
1.00
0.80
VGS=-4.5V
50
40
30
20
10
VGS=-4.5V
ID=-4.5A
VGS=-10V
ID=-5.6A
VGS=-10V
0
5
10
15
20
25
-50 -25
0
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
50
75 100 125 150 175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
70
60
50
40
30
20
10
0
ID=-5.6A
125°C
125°C
25°C
25°C
3
4
5
6
7
8
9
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4620
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
1250
1000
750
500
250
0
10
8
VDS=-15V
ID=-5.6A
Ciss
6
4
Coss
Crss
2
0
0
4
8
12
16
20
0
5
10
15
-VDS (Volts)
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10µs
30
25
20
15
10
5
100µs
TJ(Max)=150°C
TA=25°C
RDS(ON)
0.1s
1m
limited
10s
10ms
DC
0.1
TJ(Max)=150°C
TA=25°C
0
0.0
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
V
DS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=100°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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