AO4620_12 [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AO4620_12 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4620
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
The AO4620 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used
in inverter and other applications.
n-channel
p-channel
-30V
-5.3A (VGS = -10V)
VDS (V) = 30V
ID = 7.2A (VGS=10V)
RDS(ON)
RDS(ON)
< 24mΩ (VGS=10V)
< 36mΩ (VGS=4.5V)
< 32mΩ (VGS = -10V)
< 55mΩ (VGS = -4.5V)
100% UIS tested
100% Rg tested
SOIC-8
Top View
Bottom View
Top View
D2
S2
D1
S2
G2
S1
G1
D2
D2
D1
D1
1
2
3
4
8
7
6
5
G2
G1
S1
Pin1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
Drain-Source Voltage
VDS
30
-30
V
V
Gate-Source Voltage
VGS
±20
±20
-5.3
TA=25°C
TA=70°C
7.2
Continuous Drain
Current F
Pulsed Drain Current B
A
ID
6.2
-4.5
IDM
64
-40
TA=25°C
2
1.44
9
2
PD
W
Power Dissipation F TA=70°C
Avalanche Current B
1.44
17
IAR
A
mJ
°C
Repetitive avalanche energy 0.3mH B
EAR
12
43
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Device
Typ
50
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
n-ch
n-ch
n-ch
62.5
100
40
RθJA
RθJL
RθJA
RθJL
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
80
32
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
p-ch
p-ch
p-ch
50
80
32
62.5
100
40
°C/W
°C/W
°C/W
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4620
N-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.2A
100
2.6
nA
V
VGS(th)
ID(ON)
1.5
64
2.1
A
17.7
25
24
32
36
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=5A
VDS=5V, ID=7.2A
IS=1A,VGS=0V
24.8
20
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
0.74
1
V
Maximum Body-Diode Continuous Current
Pulsed Body-Diode CurrentB
2.5
64
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
373
67
448
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
41
VGS=0V, VDS=0V, f=1MHz
1.8
2.8
11
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
7.2
3.5
1.3
1.7
4.5
2.7
14.9
2.9
10.5
4.5
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=7.2A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
ns
VGS=10V, VDS=15V, RL=2.1Ω,
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=7.2A, dI/dt=100A/µs
IF=7.2A, dI/dt=100A/µs
12.6
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.
Rev 8: May 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4620
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
15
12
9
10V
VDS=5V
6V
4.5V
6
VGS=3.5V
25°C
125°C
3
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
4.5
VDS (Volts)
Fig 1: On-Region Characteristics
VGS(Volts)
Figure 2: Transfer Characteristics
45
40
35
30
25
20
15
10
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
Id=7.7A
VGS=10V
VGS=4.5V
Id=5A
0.8
0.6
0
5
10
15
20
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
I =7.7A
D
50
40
30
125°C
125°C
25°C
1.0E-03
G
20
25°C
1.0E-04
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4620
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
500
400
300
200
100
0
10
8
VDS=15V
I =7.7A
D
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
30
25
20
15
10
5
10µs
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µs
1ms
10ms
0.1s
10s
TJ(Max)=150°C
TA=25°C
DC
0.1
0
0.0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
G
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4620
P-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-30V, VGS=0V
-1
µA
-5
IDSS
Zero Gate Voltage Drain Current
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±20V
±100
-2.4
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=-250µA
-1.3
-40
-1.85
VGS=-10V, VDS=-5V
A
VGS=-10V, ID=-5.3A
23
31.5
33
32
55
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-4.5A
VDS=-5V, ID=-5.3A
IS=-1A,VGS=0V
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
19
-0.8
-1
V
Maximum Body-Diode Continuous Current
Pulsed Body-Diode CurrentB
-3.5
-40
A
ISM
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
760
140
95
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
3.2
5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
13.6
6.7
2.5
3.2
8
16
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge (4.5V)
VGS=-10V, VDS=-15V, ID=-5.3A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
6
ns
VGS=-10V, VDS=-15V, RL=2.8Ω,
RGEN=3Ω
tD(off)
tf
17
5
ns
ns
trr
IF=-5.3A, dI/dt=100A/µs
IF=-5.3A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15
ns
Qrr
nC
9.7
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The SOA curve provides a single pulse rating.
F.The current rating is based on the t ≤ 10s thermal resistance rating.
Rev8: May 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4620
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
5
30
25
20
15
10
5
-10V
-6V
-5V
-4.5V
-4V
-3.5V
VGS=-3V
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
4.5
5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
50
45
40
35
30
25
20
15
10
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-5.3A
VGS=-4.5V
VGS=-4.5V
ID=-4.5A
VGS=-10V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
80
60
40
20
0
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=-5.3A
125°C
125°C
25°C
25°C
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
1.2
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4620
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
1000
800
600
400
200
0
10
8
VDS=-15V
ID=-5.3A
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
Qg (nC)
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
30
25
20
15
10
5
10µs
100µs
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
0.1s
1ms
10s
10ms
DC
0.1
TJ(Max)=150°C
TA=25°C
0
0.0
0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
PD
0.1
Ton
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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