AO4619 [AOS]
Complementary Enhancement Mode Field Effect Transistor; 互补增强型场效应晶体管
| 型号： | AO4619 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Complementary Enhancement Mode Field Effect Transistor |
| 文件： | 总7页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4619
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel
VDS (V) = 30V
ID = 7.4A (VGS=10V)
RDS(ON)
The AO4619 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications. Standard
Product AO4619 is Pb-free (meets ROHS
& Sony 259 specifications).
p-channel
-30V
-5.2A (VGS = -10V)
RDS(ON)
< 24mΩ (VGS=10V)
< 36mΩ (VGS=4.5V)
< 48mΩ (VGS = -10V)
< 74mΩ (VGS = -4.5V)
D2
D1
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
G2
G1
SOIC-8
S2
S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Max p-channel
Units
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
Continuous Drain
Current F
±20
±20
-5.2
-4.2
-25
V
A
TA=25°C
TA=70°C
7.4
ID
6
B
Pulsed Drain Current
IDM
35
TA=25°C
TA=70°C
2
1.3
2
PD
W
Power DissipationA
1.3
B
Avalanche Current
IAR
13
11
A
B
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
EAR
25
18
mJ
°C
TJ, TSTG
-55 to 150
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Symbol
Device
Typ
50
82
Max Units
62.5 °C/W
110 °C/W
50 °C/W
A
t ≤ 10s
n-ch
n-ch
n-ch
RθJA
A
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
C
RθJL
RθJA
RθJL
41
Maximum Junction-to-Lead
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
p-ch
p-ch
p-ch
50
82
41
62.5 °C/W
110 °C/W
50 °C/W
C
Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
N-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.62
VGS=4.5V, VDS=5V
35
A
V
GS=10V, ID=7.4A
19
27
24
34
36
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
VDS=5V, ID=7.4A
IS=1A,VGS=0V
29
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
24
S
V
A
0.74
1
Maximum Body-Diode Continuous Current
2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
621
118
85
820
1.5
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.8
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
11.3
5.7
2.1
3
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=7.4A
4.5
3.1
15.1
2.7
15.5
7.1
ns
VGS=10V, VDS=15V, RL=2Ω,
GEN=3Ω
R
tD(off)
tf
ns
ns
trr
IF=7.4A, dI/dt=100A/µs
IF=7.4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
Rev 0: Oct 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
20
16
12
8
10V
6V
VDS=5V
4.5V
VGS=3.5V
125°C
4
25°C
3.5
0
0
1
2
3
4
5
1.5
2
2.5
3
4
4.5
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
40
35
30
25
20
15
10
1.6
1.4
1.2
1
VGS=10V
Id=7.4A
VGS=4.5V
VGS=4.5V
Id=6A
0.8
0.6
VGS=10V
0
5
10
15
20
-50 -25
0
25 50 75 100 125 150 175
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=7.4A
50
40
30
125°C
125°C
25°C
L
1.0E-03
20
1.0E-04
25°C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
V
GS (Volts)
V
Figure 5: On-Resistance vs. Gate-Source
Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
8
6
4
2
0
800
600
400
200
0
VDS=15V
ID=7.4A
Ciss
Coss
Crss
0
2
4
6
8
10
12
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100
10
50
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
10µs
100µs
RDS(ON)
limited
1ms
1
10ms
100m
1s
D
0.1
0.01
TJ(Max)=150°C
TA=25°C
10s
0.1
1
10
100
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient (Note E)
1
10
100
1000
-VDS (Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
L
P
DR
0.1
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
P-cahnnel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
V
VDS=-24V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
V
V
V
DS=0V, VGS=±20V
DS=VGS ID=-250µA
GS=-10V, VDS=-5V
GS=-10V, ID=-5.2A
±100
-3
nA
V
VGS(th)
ID(ON)
-1
-1.88
-25
A
38
55
48
69
74
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-4A
59
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-5.2A
IS=-1A,VGS=0V
11
S
V
A
-0.77
-1
Maximum Body-Diode Continuous Current
-2.5
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
680
115
86
816
12
pF
pF
pF
Ω
VGS=0V, VDS=-15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
8
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
12.7
6.4
2
nC
nC
nC
nC
ns
Qg(4.5V)
VGS=-10V, VDS=-15V, ID=-5.2A
Qgs
Qgd
tD(on)
tr
4
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
7.7
6.8
20
10
22
15
VGS=-10V, VDS=-15V, RL=3Ω,
RGEN=3Ω
ns
tD(off)
tf
ns
ns
trr
IF=-5.2A, dI/dt=100A/µs
IF=-5.2A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nC
Qrr
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
Rev 0: Oct 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
40
35
30
25
20
15
10
5
-10V
VDS=-5V
-8V
-5V
-4.5V
6
-4V
4
VGS=-3.5V
125°C
2
25°C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
-VDS (Volts)
-VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
100
80
60
40
20
1.6
1.4
1.2
1.0
0.8
0.6
VGS=-10V
ID=-5.2A
VGS=-4.5V
VGS=-10V
VGS=-4.5V
ID=-4A
6
0
2
4
8
10
-50
0
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
150
200
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
140
120
100
80
1E+01
1E+00
1E-01
1E-02
1E-03
ID=-5.2A
125°C
125°C
1E-04
60
25°C
1E-05
40
25°C
1E-06
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
-VSD (Volts)
-VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4619
P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1200
10
1000
VDS=-15V
8
ID=-5.2A
Ciss
800
6
600
4
400
2
0
Coss
200
0
Crss
0
3
6
9
12
15
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
25
30
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100
10
1
40
30
20
10
0
TJ(Max)=150°C
TA=25°C
100µs
RDS(ON)
limited
1ms
10ms
TJ(Max)=150°C
TA=25°C
100ms
DC
1s
10s
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
1
0.1
PD
G
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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