AO4618 [AOS]
40V Complementary MOSFET; 40V互补MOSFET
| 型号： | AO4618 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 40V Complementary MOSFET |
| 文件： | 总9页 (文件大小：1175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4618
40V Complementary MOSFET
General Description
Product Summary
The AO4618 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This
N-Channel
DS= 40V
P-Channel
V
-40V
complementary N and P channel MOSFET configuration
is ideal for low Input Voltage inverter applications.
ID= 8A (VGS=10V)
RDS(ON)
-7A (VGS=-10V)
RDS(ON)
< 19mꢀ (VGS=10V)
< 27mꢀ (VGS=4.5V)
< 23mꢀ (VGS=-10V)
< 30mꢀ (VGS=-4.5V)
100% UIS Tested
100% Rg Tested
100% UIS Tested
100% Rg Tested
SOIC-8
D2
D1
Top View
Bottom View
Top View
S2
G2
S1
G1
D2
D2
D1
D1
1
2
3
4
8
7
6
5
G2
G1
S1
S2
Pin1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Max n-channel
Max p-channel
Units
Drain-Source Voltage
Gate-Source Voltage
40
±20
8
-40
±20
-7
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
A
6
-5.5
-35
IDM
IAS
40
15
11
2
-35
61
2
A
Avalanche energy L=0.1mH C
EAS
mJ
TA=25°C
PD
W
°C
Power Dissipation B
TA=70°C
1.3
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
74
RθJL
32
40
Rev 0 : Dec. 2011
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Page 1 of 9
AO4618
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
VDS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
5
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.4
nA
V
VGS(th)
ID(ON)
1.3
40
1.9
A
15.4
23.5
21
19
29
27
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=4A
mΩ
S
VDS=5V, ID=8A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
33
IS=1A,VGS=0V
0.75
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
422
109
11
pF
pF
pF
Ω
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1
2.2
3.5
9
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.4
3.0
1.2
0.8
4.5
2
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=20V, ID=8A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=20V, RL=2.5Ω,
RGEN=3Ω
ns
tD(off)
tf
16
ns
2.4
ns
trr
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
7.3
11
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2011
www.aosmd.com
Page 2 of 9
AO4618
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
VDS=5V
4.5V
10V
3.5V
3V
125°C
4
25°C
VGS=2.5V
4
0
0
0
1
2
3
5
0
1
2
3
4
5
6
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
30
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=8A
25
20
15
10
VGS
=4.5V
I =4A
D
VGS=10V
0.8
0
3
6
9
12
15
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
50
45
40
35
30
25
20
15
10
1.0E+02
1.0E+01
ID=8A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Dec. 2011
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Page 3 of 9
AO4618
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
500
400
300
200
100
0
VDS=20V
ID=8A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
VDS (Volts)
20
25
30
0
2
4
6
8
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
1000
100
10
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
0.1
PD
0.01
0.001
Ton
T
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Dec. 2011
www.aosmd.com
Page 4 of 9
AO4618
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Rev 0 : Dec. 2011
www.aosmd.com
Page 5 of 9
AO4618
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-40
V
V
DS=-40V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
T
J=55°C
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VGS(th)
ID(ON)
V
DS=VGS ID=-250µA
V
GS=-10V, VDS=-5V
V
GS=-10V, ID=-7A
-1.7
-35
-1.9
A
19
28
23
34
30
mΩ
RDS(ON)
Static Drain-Source On-Resistance
T
J=125°C
V
V
GS=-4.5V, ID=-4A
DS=-5V, ID=-7A
24
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
26
IS=-1A,VGS=0V
-0.74
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1870
185
155
4.5
pF
pF
pF
Ω
VGS=0V, VDS=-20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=-20V, ID=-7A
VGS=10V, VDS=-20V, RL=3Ω,
2.2
6.8
45
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
32
8
nC
nC
nC
nC
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
7.6
6.2
10
18
38
24
13
33
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
ns
GEN
tD(off)
tf
ns
Turn-Off Fall Time
ns
trr
IF=-7A, dI/dt=500A/µs
IF=-7A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Dec. 2011
www.aosmd.com
Page 6 of 9
AO4618
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
50
40
30
20
10
0
VDS=-5V
-10V
-7V
-4.5V
-3.5V
125°C
25°C
VGS=-3V
0
1
2
3
4
5
0
1
2
3
4
5
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-7A
35
30
25
20
15
10
VGS=-4.5V
VGS=-10V
=-4.5V
ID=-4A
VGS
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. JunctionTemperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
(Note E)
60
1.0E+02
1.0E+01
ID=-7A
50
40
30
20
10
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Dec. 2011
www.aosmd.com
Page 7 of 9
AO4618
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
2500
2000
1500
1000
500
VDS=-15V
ID=-7A
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
-VDS (Volts)
20
25
30
0
5
10
15
Qg (nC)
20
25
30
35
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
RθJA=90°C/W
0.1
PD
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Dec. 2011
www.aosmd.com
Page 8 of 9
AO4618
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
BVDSS
Vgs
Vdd
+
VDC
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
Rev 0 : Dec. 2011
www.aosmd.com
Page 9 of 9
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