AO4618 [FREESCALE]
40V Complementary MOSFET; 40V互补MOSFET
| 型号： | AO4618 |
| 厂家： | 
Freescale |
| 描述： | 40V Complementary MOSFET |
| 文件： | 总9页 (文件大小：1135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4618
40V Complementary MOSFET
General Description
The AO4618 uses advanced trench technology to provide
complementary N and P channel MOSFET configuration
Features
excellent R
DS(ON) and low gate charge. This
is ideal for low Input Voltage inverter application
N-Channel
P-Channel
VDS= 40V
-40V
s.
ID= 8A (VGS=10V)
RDS(ON)
-7A (VGS=-10V)
RDS(ON)
< 19mꢀ (VGS=10V)
< 27mꢀ (VGS=4.5V)
< 23mꢀ (VGS=-10V)
< 30mꢀ (VGS=-4.5V)
D2
D1
Top View
S2
G2
S1
G1
D2
D2
D1
D1
1
2
3
4
8
7
6
5
G2
G1
S1
S2
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Max n-channel
Max p-channel
Units
Drain-Source Voltage
Gate-Source Voltage
40
±20
8
-40
±20
-7
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
Pulsed Drain Current C
Avalanche Current C
ID
A
6
-5.5
-35
IDM
IAS
40
15
11
2
-35
61
2
A
Avalanche energy L=0.1mH C
EAS
mJ
TA=25°C
PD
W
°C
Power Dissipation B
TA=70°C
1.3
1.3
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
48
Max
62.5
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
74
RθJL
32
40
1/9
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AO4618
40V Complementary MOSFET
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
VDS=40V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=8A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.4
nA
V
VGS(th)
ID(ON)
1.3
40
1.9
A
15.4
23.5
21
19
29
27
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=4A
mΩ
S
VDS=5V, ID=8A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
33
IS=1A,VGS=0V
0.75
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
422
109
11
pF
pF
pF
Ω
V
GS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=8A
VGS=10V, VDS=20V, RL=2.5Ω,
1
2.2
3.5
9
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
6.4
3.0
1.2
0.8
4.5
2
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
ns
R
GEN=3Ω
tD(off)
tf
16
ns
2.4
ns
trr
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
7.3
11
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/9
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AO4618
40V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
VDS=5V
4.5V
10V
3.5V
3V
125°C
4
25°C
VGS=2.5V
4
0
0
0
1
2
3
5
0
1
2
3
4
5
6
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
30
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=8A
25
20
15
10
VGS
=4.5V
I =4A
D
VGS=10V
0.8
0
3
6
9
12
15
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
50
45
40
35
30
25
20
15
10
1.0E+02
1.0E+01
ID=8A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/9
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AO4618
40V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
500
400
300
200
100
0
VDS=20V
ID=8A
8
Ciss
6
4
Coss
2
Crss
0
0
5
10
15
VDS (Volts)
20
25
30
0
2
4
6
8
Qg (nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
1000
100
10
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
0.1
PD
0.01
0.001
Ton
T
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
4/9
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AO4618
40V Complementary MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
5/9
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AO4618
40V Complementary MOSFET
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D=-250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
-40
V
V
DS=-40V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
T
J=55°C
VDS=0V, VGS=±20V
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-3
nA
V
VGS(th)
ID(ON)
V
DS=VGS ID=-250µA
V
GS=-10V, VDS=-5V
V
GS=-10V, ID=-7A
-1.7
-35
-1.9
A
19
28
23
34
30
mΩ
RDS(ON)
Static Drain-Source On-Resistance
T
J=125°C
V
V
GS=-4.5V, ID=-4A
DS=-5V, ID=-7A
24
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
26
I
S=-1A,VGS=0V
-0.74
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
1870
185
155
4.5
pF
pF
pF
Ω
VGS=0V, VDS=-20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=-20V, ID=-7A
VGS=10V, VDS=-20V, RL=3Ω,
2.2
6.8
45
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
32
8
nC
nC
nC
nC
ns
Qgs
Qgd
tD(on)
tr
Gate Source Charge
7.6
6.2
10
18
38
24
13
33
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
ns
GEN
tD(off)
tf
ns
Turn-Off Fall Time
ns
trr
IF=-7A, dI/dt=500A/µs
IF=-7A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
6/9
www.freescale.net.cn
AO4618
40V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
50
40
30
20
10
0
VDS=-5V
-10V
-7V
-4.5V
-3.5V
125°C
25°C
VGS=-3V
0
1
2
3
4
5
0
1
2
3
4
5
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
40
1.8
1.6
1.4
1.2
1
VGS=-10V
ID=-7A
35
30
25
20
15
10
VGS=-4.5V
VGS=-10V
=-4.5V
ID=-4A
VGS
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 4: On-Resistance vs. JunctionTemperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
(Note E)
60
1.0E+02
1.0E+01
ID=-7A
50
40
30
20
10
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
2
4
6
8
10
0.0
0.2
0.4
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
7/9
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AO4618
40V Complementary MOSFET
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
2500
2000
1500
1000
500
VDS=-15V
ID=-7A
8
Ciss
6
4
Coss
2
Crss
0
0
0
5
10
15
-VDS (Volts)
20
25
30
0
5
10
15
Qg (nC)
20
25
30
35
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
10s
DC
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
RθJA=90°C/W
0.1
PD
0.01
Ton
T
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
8/9
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AO4618
40V Complementary MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
-10V
-
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
t
td(off)
td(on)
t
r
f
Vgs
-
90%
10%
DUT
Vdd
Vgs
VDC
+
Rg
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
EAR= 1/2 LIA2R
L
Vds
Id
Vgs
Vds
-
BVDSS
Vgs
Vdd
VDC
+
Id
Rg
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
-Isd
-IF
Isd
Vgs
dI/dt
-IRM
+
Vdd
VDC
Vdd
-
-Vds
9/9
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