AO4422L [AOS]
Transistor;
| 型号： | AO4422L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4422
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4422 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
product AO4422 is Pb-free (meets ROHS & Sony
259 specifications). AO4422L is a Green Product
ordering option. AO4422 and AO4422L are
electrically identical.
VDS (V) = 30V
ID = 11A
(VGS = 10V)
RDS(ON) < 15mΩ (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 4.5V)
D
S
S
S
S
G
D
D
D
D
G
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
V
A
TA=25°C
TA=70°C
11
ID
9.3
Pulsed Drain Current B
IDM
50
3
TA=25°C
TA=70°C
PD
W
Power Dissipation
2.1
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
59
75
RθJL
16
24
Alpha & Omega Semiconductor, Ltd.
AO4422
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
VDS=24V, VGS=0V
0.003
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS= ±20V
100
3
nA
V
VGS(th)
ID(ON)
VDS=VGS ID=250µA
1
1.8
VGS=4.5V, VDS=5V
40
A
V
GS=10V, ID=11A
12.6
16.8
19.6
25
15
21
24
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
VDS=5V, ID=11A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.75
1
Maximum Body-Diode Continuous Current
4.3
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
800
140
80
1040 1250
pF
pF
pF
Ω
V
GS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
180
110
0.7
220
140
0.85
VGS=0V, VDS=0V, f=1MHz
0.5
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
15
7
19.8
9.8
24
12
nC
nC
nC
nC
ns
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
V
GS=10V, VDS=15V, ID=11A
2.5
3.5
4.5
6.5
5.5
25
5
3.9
ns
VGS=10V, VDS=15V, RL=1.35Ω,
GEN=3Ω
R
tD(off)
tf
17.4
3.2
ns
ns
trr
IF=11A, dI/dt=100A/µs
IF=11A, dI/dt=100A/µs
17.5
9.3
21
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev4: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO4422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
4V
10V
4.5V
VDS=5V
3.5V
125°C
VGS=3V
25°C
4
0
0
0
1
2
3
4
5
1.5
2
2.5
3
3.5
4
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure2: Transfer Characteristics
24
22
20
18
16
14
12
10
1.6
1.4
1.2
1
VGS=10V
V
GS=4.5V
ID=10A
VGS=4.5V
VGS=10V
0.8
0
5
10
D (A)
15
20
0
25
50
75
100
125
150
175
I
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
50
40
ID=10A
125°C
25°C
30
1.0E-03
125°C
G
20
1.0E-04
25°C
1.0E-05
10
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4422
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
8
VDS=15V
ID=11A
1250
1000
750
500
250
0
Ciss
6
4
Coss
2
Crss
0
0
4
8
12
16
20
0
5
10
15
VDS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
50
TJ(Max)=150°C
RDS(ON)
limited
100µs
TA=25°C
40
30
20
10
0
10µs
1ms
10ms
0.1s
1s
TJ(Max)=150°C
TA=25°C
10s
DC
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=40°C/W
P
G
D
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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